Measurement of Infant Mortality Rate in InGaP/GaAs Heterojunction Bipolar Transistor Technology

Alt, K. W.; Yeats, R.; Hutchinson, C.P.; Kühn, Daniel; Low, Thomas; Iwamoto, M.; Adamski, Mariusz; Shimon, R.; Shirley, Tim; Bonse, M.; Kellert, F. G.; D'Avanzo, D.C.

doi:10.1109/rocs.2006.323410

Cited by 4 publications

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“…We have worked with GaAs substrate suppliers to encourage manufacturing of lower dislocation substrates; ~ 3X reduction in dislocations was achieved by AXT Inc., which has lowered Pqf by ~ 3X compared to standard VGF. We have found that infant failures caused by dislocations have lower Ea than those associated with wearout[9], which is also reflected in the slower drop in β seen for the infant failure inFig. 4.V.…”

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confidence: 62%

“…We have found that dislocations in the GaAs substrate cause infant failures [9,10], and that this effect dominates for us over process-induced infant failures. LEC substrates with ~40,000 dislocations/cm 2 were compared to VGF substrates with ~4000 dislocations/cm 2 using a special "MSI reliability circuit" [2] that can sense the β failure of a single transistor among 200 unfailed transistors (Fig.…”

Section: Infancy Reliabilitymentioning

confidence: 99%

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GaAs HBT Reliability

Yeats

Low

Alt

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes. We have found that infant failures are dominated by substrate dislocation density, which can limit long-term-reliable circuit sizes to under ~1000 transistors.

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confidence: 62%

Section: Infancy Reliabilitymentioning

confidence: 99%