2020
DOI: 10.1109/temc.2019.2945560
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Measurement of Near-Field Electromagnetic Emissions and Characterization Based on Equivalent Dipole Model in Time-Domain

Abstract: In this paper, a method for representing electromagnetic emissions from a device under test (DUT) using an equivalent time dependent dipole array model deduced from the time-domain near-field scanned tangential magnetic fields is proposed. First, a 3D time-domain near-field scanning system is established to measure the tangential magnetic fields emitted from DUTs which are a transmission line above a ground plane and a printed circuit board (PCB) with several microstrips respectively. For time-domain measureme… Show more

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Cited by 20 publications
(14 citation statements)
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References 17 publications
(33 reference statements)
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“…Nevertheless, E and H fields decrease very rapidly with distance in near-field region so that they depend mainly on the charge and current distribution along the portion of the microstrip line placed just below the measurement point. E and H fields can be determined according to Gauss theorem (11) and Biot and Savart law (12) if this portion is electrically small. The evaluation of the length of this portion will be addressed later in part C, once closed-form expressions of E and H fields will be extracted.…”
Section: Closed-form Expressions Of the Near-fields Above Microstrip Linementioning
confidence: 99%
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“…Nevertheless, E and H fields decrease very rapidly with distance in near-field region so that they depend mainly on the charge and current distribution along the portion of the microstrip line placed just below the measurement point. E and H fields can be determined according to Gauss theorem (11) and Biot and Savart law (12) if this portion is electrically small. The evaluation of the length of this portion will be addressed later in part C, once closed-form expressions of E and H fields will be extracted.…”
Section: Closed-form Expressions Of the Near-fields Above Microstrip Linementioning
confidence: 99%
“…If the line thickness is neglected, the tangential H-field at any point (xP,yP,r) can be determined by considering a uniform current density J flowing through a rectangular conductive sheet. If the current is oriented along x, the tangential H-field produced by the current distribution along the trace can be determined from the resolution of integral (12). According to ( 16) to ( 19), ( 12) is rewritten in (20).…”
Section: A Expression Of Near H-field Above the Microstrip Line 1) Tangential H-field Above The Microstrip Linementioning
confidence: 99%
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“…In general, the interference analysis can be performed at any distance from the signal source antenna. In the case of a near-field, the influence between the individual elements of the multi-antenna system can be investigated [ 20 , 21 , 22 , 23 , 24 ]. In the case of a far-field, inter-beam [ 25 , 26 ], inter-cell [ 18 , 26 , 27 ], or inter-system interferences, i.e., the coexistence of different systems and networks [ 9 , 11 , 28 ], might be studied.…”
Section: Introductionmentioning
confidence: 99%