Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

MacKenzie, Roderick C. I.; Lim, J.J.; Bull, S.; Chao, Shi‐Lei; Sujecki, S.; Sadeghi, Mahdad; Wang, S.M.; Larsson, Anders; Melanen, P.; Sipilä, Pekko; Uusimaa, P.; Larkins, E.C.

doi:10.1049/iet-opt:20070035

Cited by 5 publications

(3 citation statements)

References 17 publications

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“…The corresponding field decay rate κ is half the intensity decay rate, as per (A1.6), with c the vacuum speed of light and n g the group index. Using a group index n g value of 3.6 from [38] then gives κ as 68. The electron recombination lifetime γ was taken as 1 ns −1 [7].…”

Section: A2 Derivation Of the Sfm Parametersmentioning

confidence: 99%

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

Cemlyn

Adams

Harbord

et al. 2018

Semicond. Sci. Technol.

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Using continuous-wave optical pumping of a spin-VCSEL at room temperature, we find high spin amplification of the pump close to threshold within the communications wavelength window, here at 1300 nm. This facilitates a strong switch from left to right circularly polarised light emission, which has potential applications in polarisation encoding for data communications. We use a simple spin flip model to fit the experimental results and discuss the VCSEL parameters that affect this amplification.

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Section: A2 Derivation Of the Sfm Parametersmentioning

confidence: 99%

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

Cemlyn

Adams

Harbord

et al. 2018

Semicond. Sci. Technol.

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“…Thus, their behavior is sensitive to selfheating, and it is important to validate the parameters used in the thermal model. As the rise in internal temperature usually causes a red-shift in emission wavelength above threshold [45]- [47], this can often be used to determine the thermal resistivity of the laser diode package. (Frequency-stabilized lasers are an exception.)…”

Section: Advanced Validation For Accurate Device Simulationmentioning

confidence: 99%

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Lim

Sujecki

Lang

et al. 2009

IEEE J. Select. Topics Quantum Electron.

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Abstract-High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal-and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broadarea laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.

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“…1, next we characterize the devices using Impedance Spectroscopy (IS), steady state electrical measurements and transient optoelectronic techniques. We then extend our electro-optical device model 12 to simulate carrier transport over heterojunctions [13][14][15] and optical propagation/carrier generation in multilayered structures. Finally using a combination of characterization and modeling we show that the increased efficiency is due to optical generation of excitons within the polymer layer and subsequent charge separation at the polymer:fullerene interface.…”

Section: Introductionmentioning

confidence: 99%

Increasing organic solar cell efficiency with polymer interlayers

Deschler

Riedel

Ecker³

et al. 2013

Phys. Chem. Chem. Phys.

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We demonstrate how organic solar cell efficiency can be increased by introducing a pure polymer interlayer between the PEDOT:PSS layer and the polymer:fullerene blend. We observe an increase in device efficiency with three different material systems over a number of devices. Using both electrical characterization and numerical modeling we show that the increase in efficiency is caused by optical absorption in the pure polymer layer and hence efficient charge separation at the polymer bulkheterojunction interface.

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Measurement of optical gain, effective group index and linewidth enhancement factor in 1.3 µm dilute nitride double-quantum-well lasers

Cited by 5 publications

References 17 publications

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

Near-threshold high spin amplification in a 1300 nm GaInNAs spin laser

Design and Simulation of Next-Generation High-Power, High-Brightness Laser Diodes

Increasing organic solar cell efficiency with polymer interlayers

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