Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

Abstract

A small signal method is used to measure the carrier lifetime as a function of injected carrier density, and the results are used to determine the radiative and nonradiative recombination rates for AlGaAs LED's and 1.3 pm InGaAsP lasers. For AlGaAs LED's the radiative recombination constant decreases with injected carrier density and the rate equation contains a small nonradiative Cn3 term. The low internal efficiency of 1.3 pm InGaAsP lasers is found to be primarily caused by two factors: a radiative coefficient B(n) which strongly decreases with the injected carrier density, and CHHS Auger recombination having a recombination coefficient of 1-2 X lo-'' cm6/s. A recombination term representing carrier leakage is observed in some devices, but it is not the principal cause of low internal efficiency. OLSHANSKY et al.: RADIATIVE AND NONRADIATIVE RECOMBINATION RATES 853

Detailed dynamic model for semiconductor optical amplifiers and their crosstalk and intermodulation distortion

“…For the recombination rate R ( N ) , we use a detailed model [23] R ( N ) = c~N + c2N2 + c3N3 (28) where c1, c2, and c3 are constants. The last term in (27) accounts for the stimulated emission where S7n,s,g and Sm,spon are the average photon densities for the signal and spontaneous emission, respectively.…”

Modeling of integrated extended cavity InP/InGaAsP semiconductor modelocked ring lasers

“…It is bi-directional to describe realistic laser systems which usually operate with pulses travelling in both directions. For the description of the SOA, the model of Tang and Shore has been extended with bidirectional fields, separate radiative and non-radiative carrier recombination processes (Olshansky et al 1984) and a logarithm gain-carrier relation. This gain relation has been validated for the bulk material used in the RMLL described in Barbarin et al (2006).…”

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

“…2, there is a clear decrease in the gradient at high current injection levels for sample C. Identical behavior was obtained using a pulsed current source, ruling out heating effects. It is possible that other nonradiative recombination processes such as Auger recombination [13], [14] might begin to become significant at these high current levels.…”

“…The optical properties of QD structures are often investigated by photoluminescence (PL) [13]- [15], however, this is often difficult to measure in full laser structures without etching off the contacting layers or relying on investigations of simpler test structures, which may not be representative of the full device structure. In PL measurements, variations in the thickness and doping levels of the top cladding layers can also affect the injection of minority carriers into the structure.…”