Measurement of Silicon Micromachined Waveguide Components at 500–750 GHz

2016 IEEE MTT-S International Microwave Symposium (IMS)

Decrossas

et al. 2016

-This paper presents a 500-750 GHz waveguide based single-pole single-throw (SPST) switch achieving a 40% bandwidth. It is the first ever RF MEMS switch reported to be operating above 220 GHz. The switch is based on a MEMSreconfigurable surface which can block the wave propagation in the waveguide by short-circuiting the electrical field lines of the TE10 mode. The switch is designed for optimized isolation in the blocking state and for optimized insertion loss in the nonblocking state. The measurement results of the first prototypes show better than 15 dB isolation in the blocking state and better than 3 dB insertion loss in the non-blocking state for 500-750 GHz. The higher insertion loss is mainly attributed to the insufficient metal thickness and surface roughness on the waveguide sidewalls. Two switch designs with different number of blocking elements are fabricated and compared. The overall switch bandwidth is limited by the waveguide only and not by the switch technology itself.

Section: Fabrication and Assemblymentioning

confidence: 99%

500-750 GHz submillimeter-wave MEMS waveguide switch

Shah

2016 IEEE MTT-S International Microwave Symposium (IMS)

Decrossas

et al. 2016

“…These pins are placed in alignment pockets machined into the block face. Then, the MEMS wafer is placed onto the pins [6]. The lower part of Fig.…”

Section: Fabrication Assembly and Testingmentioning

confidence: 99%

A 700-GHz MEMS Waveguide Switch

IEEE Trans. THz Sci. Technol.

Jung-Kubiak

Chattopadhyay

2016

Self Cite

A low-loss microelectromechanical systems (MEMS) waveguide reflect switch is demonstrated operating across the WM-380 (WR-1.5) waveguide band. The design uses a large deflection MEMS actuator to mechanically obstruct a reduced height waveguide to create the switch. The MEMS device exhibits 3 dB of insertion loss across the band in the open state, over 20 dB of isolation when closed, and better than 20 dB of return loss. Lifetime testing of this device demonstrates 5.07 million cycles before it failed in the closed state. Index Terms-Reflect switch, RF microelectromechanical systems (RF-MEMS), silicon micromachining.

“…Alignment between the silicon and the waveguide flange fixture is achieved through silicon compression pins [2]. These pins have alignment precision better than 2 um, and the tolerances between the flange pin and the compression pin alignment feature result in an overall tolerance of lOum between the waveguide and measurement flange.…”

Section: Fabrication and Assemblymentioning

confidence: 99%

“…S ilicon micromachining has emerged as a viable technique for manufacturing terahertz waveguide circuitry [1] [2]. Deep Reactive Ion Etching (DRIE) of silicon has been used to demonstrate a wide variety of components including filters, hybrid couplers and receivers [3].…”

Section: Introductionmentioning

confidence: 99%

Silicon micromachined waveguide components at 0.75 to 1.1 THz

2014 39th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Jung-Kubiak

Leal-Sevillano

et al. 2014

Self Cite

Abstract-Silicon micromachined waveguide components operating in the WM-250 (WR-1) waveguide band (0.75 to 1.1 THz) are measured. Through lines are used to characterize the waveguide loss with and without an oxide etch to reduce the surface roughness. A sidewall roughness of lOOnm is achieved, enabling a waveguide loss of 0.2dB/mm. A ITHz band-pass filter is also measured to characterize the precision of fabrication process. A 1.8% shift in frequency is observed and can be accounted for by the 0.5deg etch angle and 2um expansion of the features by the oxide etch. The measured filter has a 13% 3dB bandwidth and 2.5dB insertion loss through the passband.