Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon -carbide power devices

Nowak, M.; Rąbkowski, Jacek; Barlik, R.

doi:10.1109/epepemc.2008.4635248

Cited by 17 publications

(13 citation statements)

References 3 publications

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“…In the field of power electronics, this measurement method is widely used because almost all power devices have a PN junction in their structure. The method can therefore be used with diodes in forward polarization [31][32][33][34][35], MOSFET [36] in the off-state, base-emitter junction of bipolar transistors [28]. This method is also frequently used with IGBT [19,34,[37][38][39][40].…”

Section: Temperature Measurement With a High Pm Valuementioning

confidence: 99%

“…In the case of Schottky diodes, a possible TSEP is the voltage under a low current. It was used by Nowak et al [33] but the authors do not give any value for the sensitivity of this parameter.…”

Section: ) Sic Devicesmentioning

confidence: 99%

“…The JFET is the most studied device in term of TSEP. A first method is the measurement of the channel resistance in onstate [33,[62][63][64]. The sensitivity is about several mΩ/°C for devices having a channel resistance of several hundreds of mΩ.…”

Section: ) Sic Devicesmentioning

confidence: 99%

“…Gate-emitter voltage under a high current as thermo-sensitive parameter 3) Measurement of the saturation currentIn the case of IGBT or MOSFET, the saturation current can be used as a thermo-sensitive parameter[19,33,37,[49][50][51].For this measurement, a voltage is applied to power electrodes. The gate-emitter (or gate-source) voltage value Vgem is slightly higher than the threshold voltage Vth of the device.…”

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confidence: 99%

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Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

450

202

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This paper proposes a synthesis of different electrical methods used to estimate the temperature of power semiconductor devices. The following measurement methods are introduced: the voltage under low current levels, the threshold voltage, the voltage under high current levels, the gate-emitter voltage, the saturation current and the switching times. All these methods are then compared in terms of sensitivity, linearity, accuracy, genericity, calibration needs and possibility of characterizing the thermal impedance or the temperature during the operation of the converter. The measurement of thermo-sensitive parameters of wide band gap semi conductors is also discussed.

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Section: Temperature Measurement With a High Pm Valuementioning

confidence: 99%

Section: ) Sic Devicesmentioning

confidence: 99%

Section: ) Sic Devicesmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Avenas

Dupont²,

Khatir³

2012

IEEE Trans. Power Electron.

450

202

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“…For the two-dimension temperature probability graph, [T] is the vector [X] in equation (11), hence the kernel density functionˆ() h fx can be obtained according to equations (11)- (13). The histogram spectrum density and kernel estimation densityˆ() h fx of normal condition fit together according to their respective temperature, as plotted in Fig.10(a).…”

Section: Calculation Of Temperature Spectrum Densitymentioning

confidence: 99%

A temperature spectrum density distribution based condition evaluation method and application in IGBT

Gao

Yang

Chen

et al. 2016

Applied Thermal Engineering

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Maximizing power utilization of dual converter using predictive control with steady state cost

Votava

Šmı́dl

Peroutka

et al. 2021

IET Power Electronics

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Capability to deliver maximum power of a converter is essential for increasing power density that is limiting in many applications. Therefore, control algorithm should guarantee operation within converter thermal limits. This requirement can be formalized by a hard constraint in the cost function of model predictive control (MPC). However, the temperatures of the converter elements are not constant in the steady state, which complicates evaluation of the cost on long prediction horizon. Therefore, the evaluation is simplified utilizing the analysis of steady state behaviour of the model and derived current derating laws calculated in off‐line manner. The derating law is used as the terminal set in MPC which allows using one‐step‐ahead evaluation for efficient real‐time implementation. The steady state analysis also provides coefficients for power loss balancing. The proposed approach is applied to control of dual converter, which has high redundancy of switching elements and, thus, wide space for optimization. It is shown in simulation that the proposed approach has better performance than previously published algorithms, at lower computational cost. Experimental evaluation of the algorithm performed on a converter prototype of rated power of 10 kW shows that the proposed controller is able to safely operate the converter near the thermal limit.

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Measurement of temperature sensitive parameter characteristics of semiconductor silicon and silicon -carbide power devices

Cited by 17 publications

References 3 publications

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

A temperature spectrum density distribution based condition evaluation method and application in IGBT

Maximizing power utilization of dual converter using predictive control with steady state cost

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