Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

Yakimov, A. V.; Филатов, Д. О.; Горшков, О. Н.; Антонов, Д. А.; Liskin, Dmitry; Антонов, И. Н.; Belyakov, A. V.; Klyuev, Alexey V.; Carollo, Angelo; Spagnolo, Bernardo

doi:10.1063/1.5098066

Cited by 97 publications

(27 citation statements)

References 37 publications

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“…It should be noted that the presence of a higher concentration of vacancies near TE and grain boundaries with a reduced energy of oxygen ion migration in the ZrO 2 (Y) film creates the necessary conditions for the growth of conducting filaments along the grain boundaries under the action of electric field and Joule heating, as was previously reported …”

Section: Resultsmentioning

confidence: 60%

“…In accordance with our experimental data, the dielectric properties of device in the IS state (Figure a) are provided by the ZrO 2 (Y) and Ta 2 O 5 layers. The ZrO 2 (Y) layer contains the initial concentration of oxygen vacancies corresponding to the degree of yttrium doping (about 6% of total number of oxygen sites) and grain boundaries (nominally marked as GB with dashed lines), which are characterized by the oxygen depletion and lower activation energy for the migration of oxygen vacancies . The Ta 2 O 5 film contains an excess of tantalum atoms and inter‐columnar boundaries (despite the amorphous structure).…”

Section: Resultsmentioning

confidence: 99%

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Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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nanoelectronic devices with the effect of resistive switching, which consists in a reversible change of resistance in response to electrical stimulation [5] and is identified with the memristive effect. [6] Despite the significant progress in understanding of the memristive effect and approaching maturity of the technology of resistiveswitching devices over the last 10 years, there are still a number of fundamental problems to solve.A key problem on the way of using resistive-switching devices as programmable elements in memory devices and mixed analog-digital processors of new generation is the variability of resistive switching parameters inherent to memristive thin-film devices. [7] Achieving stable switching between the nonlinear resistive states is also an important task on the way to implementing large passive crossbar arrays of memristors and solving the problem of leakage currents in them. [8,9] Metal-oxide memristive devices are most compatible with the traditional complementary metal oxide semiconductor (CMOS) process and exhibit a valence change memory effect. [10] The variation of switching parameters in such devices is caused by the stochastic nature of migration of oxygen ions and/or vacancies responsible for the local oxidation and recovery of conductive channels (filaments) and is accompanied by the degradation of switching parameters in the case of uncontrolled oxygen exchange between the dielectric and electrode materials.The traditional approaches to control the reproducibility of resistive switching include the formation of special electric field concentrators [11][12][13] and appropriate selection of materials/interfaces in memristive device structure. In the latter case, bilayer or multilayer structures are formed, in which the switching oxide alternates with a barrier/buffer layer (layers) to control the migration of oxygen vacancies, [14,15] with a layer of low dielectric constant [16,17] to obtain nonlinear currentvoltage (I-V) characteristics, or with a layer of higher/lower thermal conductivity [18,19] for the removal/retention of heat in the switching area and to achieve analog switching character. To tune the resistive states with given accuracy, regardless of

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Mikhaylov

Belov

Королев

et al. 2019

Adv Materials Technologies

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“…Under the electric field, oxygen defects in YSZ promote the conductive oxygen vacancy filaments growth is proven by the tunneling current distribution in the C-AFM image result. [29] To qualitatively analyze the oxygen defects in YSZ samples, selected area (1.5 µm × 1.5 µm) on YSZ samples was scanned by applying 2 V bias to a bottom electrode with 1 µA current limit by subsequent C-AFM probe current mapping. The hypothesis on current spike formation and magnitude of tunneling current at C-AFM probe reveals the formation of conductive filaments, and thereby oxygen defects sites in YSZ samples can be traced.…”

Section: Resultsmentioning

confidence: 99%

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing

Nikam

Kwak

Hwang

2021

Adv Elect Materials

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mimicking the brain-like functionality are being explored. [2] The development of artificial synapse devices with better synaptic plasticity and high speed is the demand of present technology. Extensive integrated circuits on complementary metal-oxidessemiconductor (CMOS), [3] and two terminal memristors such as phase-change memory (PCM), [4] resistive randomaccess memory (RRAM), [5] and other filament-based memory devices have been attempted for synaptic neural functions, but they lack in symmetricity and linear switching in conductance level; also they consume massive space and energy due to large scale complexity.However, three-terminal electrochemical random-access (ECRAM) may allow for improved multi-level memory storage due to separate read and write paths. Solid-state ECRAM was first demonstrated in 1989 using hydrogen doping of WO 3 , though those failed after 25 cycles and needed high voltage. [6] Recently, ECRAM has been proposed as synaptic devices to build artificial neural networks (ANNs) for neuromorphic computing. [7] An ECRAM, also referred to as "redox transistor or synaptic transistor," consists of a mixed ion-electron conductor channel into which an ion-conducting electrolyte pumps ions under the influence of a gate electrode. [8] The operations of ECRAM are based on modulating the device conductance by ionic doping/de-doping. [6][7]9] In ECRAM, the conventional gate dielectric was substituted by an electrolyte gate, which allows the conduction of various mobile ions, e.g., H + , Li + , and O 2-. The ECRAM synapse has a two-step mechanism: firstly, the synaptic weight update is modulated by the applied gate bias; on the second part, the read is separately operated on a channel at the source-drain terminal. [10] Earlier reported Li + and H + based ECRAM shows recommended synaptic property with high endurance and low energy consumption. [7,11] Li + ion-based ECRAM (Li-ECRAM) has shown very consistent charge-discharge curves and no longer suffers from open circuit potential (OCP) issues. [12] However, Li-ECRAM suffers from a significant shortcoming, such as the devices using nonstandard materials, including lithium transition metal oxides and polymers, all of which cannot be integrated into CMOS circuits for real application. [10b,13] In other respect, proton-based ECRAM (H-ECRAM) devices exhibit a non-zero OCP that is resulting in poor data retention. When the gate is Artificial synapses based on electrochemical random-access memory (ECRAM) have emerged as an important component for neuromorphic chips because they are capable to execute simultaneous signal transmission and memory operations. However, existing ECRAM synapse surfers with compatibility and rapid memory loss issue due to highly reactive Li + and H + cationic species. Here, all-solid-state oxygen ion-based ECRAM (O-ECRAM) synapse, which shows linear weight update characteristics through multi-level nonvolatile analog conductance states is presented. Crucially, an O-ECRAM device delivering the highly stable, nonvolatile multi-leve...

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“…[17]) улучшение параметров РП при переключении пилообразным напряжением с наложением ВЧ синусоидального сигнала, наблюдавшееся ранее с использованием АСМ, было связано с резонансной активацией миграции ионов O 2− по вакансиям кислорода в ZrO 2 (Y) под действием переменного внешнего напряжения. С другой стороны, как было установлено в [24,25], энергия активации миграции ионов О 2− по вакансиям кислорода, которая является основным фундаментальным элементарным процессом механизма РП, E a = 0.52−0.68 V (для так называемых активных вакансий, имеющих атом Y в первой координационной сфере [26]). Исходя из указанных значений E a , характерная частота перескоков ионов O 2− на соседние вакансии f i может быть оценена по формуле 10 -2 Наблюдаемое в эксперименте улучшение отношения I ON /I OFF , а также уменьшение V SET и V RESET при наложении ВЧ синусоидального сигнала на треугольные переключающие импульсы может быть связано, как и в [17], с резонансной активацией дрейфа и диффузии ионов O 2− по кислородным вакансиям в ZrO 2 (Y) под действием внешнего переменного электрического поля.…”

Section: методика экспериментаunclassified

Резистивное Переключение Мемристоров На Основе Стабилизированного Диоксида Циркония Сложными Сигналами

Филатов¹,

Антонов²,

Антонов³

et al. 2020

Физика Твердого Тела

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Изучены особенности резистивного переключения в экспериментальных образцах мемристоров на основе тонких пленок стабилизированного иттрием диоксида циркония треугольными импульсами, на которые накладывался высокочастотный синусоидальный сигнал. Обнаружено уменьшение значений напряжения переключения мемристора из низкоомного состояния в высокоомное и обратно, а также увеличение отношения значений силы тока через мемристор в указанных состояниях и долговременной стабильности тока при наложении синусоидального сигнала на переключающие импульсы по сравнению с переключениями треугольными импульсами без синусоидального сигнала. Улучшение характеристик резистивного переключения связано с резонансной активацией миграции ионов кислорода по вакансиям в переменном внешнем электрическом поле. Ключевые слова: мемристор, резистивное переключение, стабилизированный диоксид циркония, резонансная активация.

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Measurement of the activation energies of oxygen ion diffusion in yttria stabilized zirconia by flicker noise spectroscopy

Cited by 97 publications

References 37 publications

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

Multilayer Metal‐Oxide Memristive Device with Stabilized Resistive Switching

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing

Резистивное Переключение Мемристоров На Основе Стабилизированного Диоксида Циркония Сложными Сигналами

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