Measurement of the barrier height of the reflective W {110} plane boundaries in surface diffusion of single atoms

Wang, Shi-Cai; Tsong, Tien T.

doi:10.1016/0039-6028(82)90237-0

Cited by 63 publications

(4 citation statements)

References 5 publications

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“…The existence of such an activation barrier has been uncovered some years ago by field ion microscopy experiments in a variety of both heterogeneous and homogeneous systems [26]. The height of this barrier has been found for W/W(ll0) to be about 200meV [27]. In the simulations the effect of this activation barrier is incorporated by introducing an additional parameter, PA, representing the probability of passing the activation barrier per attempt to descend.…”

Section: Resultsmentioning

confidence: 97%

New phenomena in homoepitaxial growth of metals

et al. 1991

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Abstract. The growth of Pt(lll) by Pt vapour deposition is studied by He diffraction as a function of substrate temperature and deposition rate. At a deposition rate of about 2.5 x 10 -2. monolayers/second several growth modes are observed: layer-by-layer (2D-) growth at 450 K <~ Ts <~ 800 K, multilayer (3D-) growth at 340 K <~ Ts <~ 450 K and reentrant layer-by-layer (2D-) growth at Ts <~ 340 K. The observed growth modes and in particular the reentrant 2D-growth are shown to be characteristic of growing Pt(111) under clean conditions, i.e. not influenced by contaminants. The influence of the intra-and interlayer mass transport on the growth mode is discussed in the light of experimental and simulation results. The 3D-growth mode is attributed to the existence of an activation barrier which suppresses the descent of adatoms from the top of the growing adatom islands onto the lower terraces. The barrier can be overcome by thermal adatoms at Ts >~ 450K enabling interlayer mass transport which leads to 2D-growth. The reentrant 2D-growth occurs due to a break down of this barrier for small, irregularly shaped islands.

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Section: Resultsmentioning

confidence: 97%

New phenomena in homoepitaxial growth of metals

et al. 1991

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“…8 Early experimental studies of diffusion on surfaces with a complex morphology have been performed using field ion microscopy and scanning tunneling microscopy of simple adatoms on metal surfaces. [9][10][11] However, such purely experimental studies have the disadvantage that they only yield values that are averages over step-edges of different sizes and shapes, including unrelated defects. Further studies thus fitted experiments with scaling-models from nucleation theory to approximate step-edge barrier heights.…”

Section: Introductionmentioning

confidence: 99%

Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101̄0) surface

Pałczynski

Herrmann

Heimel

et al. 2016

Phys. Chem. Chem. Phys.

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Mass transport processes of conjugated organic molecules (COMs) on inorganic surfaces are essential elements in thin film deposition for hybrid optoelectronic devices. Defects and in particular surface step-edges dictate the molecular nucleation and growth morphology, which itself determine many physical properties of the resulting hybrid interface. Here, we explore the detailed molecular kinetics and transport rates of a single physisorbed para-sexiphenyl (p-6P) molecule crossing a step-edge (a "hetero-Ehrlich-Schwoebel barrier") on the inorganic ZnO (101[combining macron]0) surface by a combination of all-atom molecular dynamics simulations and passage time theory. We determine temperature- and charge-dependent (free) energy landscapes, position-dependent diffusion coefficients, and ultimately the mean first passage time over the step-edges. We find two completely different step-edge crossing mechanisms, the occurrence and rates of which simultaneously depend on both electrostatic and thermal molecule-surface coupling. In weakly coupled systems, the molecule crosses the step relatively quickly (in nanoseconds) by log-roll mechanisms while for strongly coupled systems, it crosses relatively slowly (in microseconds) in a strictly perpendicular fashion. In the latter process, "internal friction" from intramolecular bending and torsional degrees of freedom contribute a significant corrugation to the overall crossing barrier. Furthermore, we show that crossing pathways can also change qualitatively with step-edge height. The great complexity in hetero-barrier crossing of COMs (in contrast to simple atoms) revealed in this study has implications on the interpretation and possible control of nucleation and growth mechanisms at surface defects in hybrid systems.

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“…[15,19,20] Our explanation of Fig. 1 is based on the experimentally verified fact [21,22] that is the existence of the ES barrier E B on a metallic surface. At high temperatures, due to their high thermal energy, atoms can overcome the barrier and the film essentially in a layer-by-layer manner.…”

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confidence: 93%

Transition of Growth Mode in Homoepitaxy on Metal Surface

Wu¹,

Lu²,

Wu³

2007

Commun. Theor. Phys.

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The process of the multilayer growth of Pt on Pt (111) is studied by using a Monte Carlo model with realistic physical parameters. The effects of the substrate temperature, the ES barrier, and the deposition rate on the growth mode have been investigated. Gradual transitions of the surface roughness from oscillatory to non-oscillatory behavior and then back to oscillatory behavior are observed while increasing the substrate temperature from 270 K to 620 K. It is found that the growth mode depends strongly on ES barrier over the whole temperatures and the deposition rate of atoms effectively affects the growth mode. The simulation results are consistent with many experimental observations for homoexpitaxy on a Pt (111) substrate.

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Measurement of the barrier height of the reflective W {110} plane boundaries in surface diffusion of single atoms

Cited by 63 publications

References 5 publications

New phenomena in homoepitaxial growth of metals

New phenomena in homoepitaxial growth of metals

Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101̄0) surface

Transition of Growth Mode in Homoepitaxy on Metal Surface

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