Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Kang, Guozheng; Holmes, Mark; Arita, Munetaka; Arakawa, Yasuhiko

doi:10.1002/pssa.201700630

Cited by 8 publications

(3 citation statements)

References 39 publications

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“…Figure 4d shows the PL lifetime of the MoSe2 QDs on the heterostructures, which was measured by excitation with a 640 nm, ~200 ps, 10MHz pulsed diode laser and sending the spectrally filtered output around the quantum dot wavelength to a single-photoncounting APD. The measured long lifetime of ~ 3 ns from the exponential fitting (black line) is consistent with the behavior shown by typical III-V semiconductor quantum dots [38][39][40][41] .…”

Section: The Quantum Confinement Of Excitons In Thesupporting

confidence: 84%

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Jariwala

Kim

Huet

et al. 2023

Preprint

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Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.

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Section: The Quantum Confinement Of Excitons In Thesupporting

confidence: 84%

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Jariwala

Kim

Huet

et al. 2023

Preprint

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show abstract

“…The macro steps in the quantum well (that conforms with the profile of the hillock) lead to additional lateral confinement in the well. It is theorized that higher temperature growth used for these samples results in a cleaner environment with a lower density of charge traps [37,86] than traditional GaN/AlN QDs. This lower density of defects ultimately leads to reduced spectral diffusion.…”

Section: Spectral Diffusion and Emission Linewidthsmentioning

confidence: 99%

III-nitride quantum dots as single photon emitters

Holmes

Arita

Arakawa

2019

Semicond. Sci. Technol.

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III-nitride quantum dots are proving to be promising for application to single photon emitting devices. Research around the globe is revealing several interesting properties of these emitters, including a wide range of emission wavelengths, high temperature operation, and deterministic polarization of the emitted photons. Here a review is given on the single photon emission properties of such III-nitride quantum dots.

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“…The g (2) ( t ) traces (Figure b) show that the QD excitation lifetime increases at low pumping powers. For quantitative analysis, the measured g (2) ( t ) traces at each pump power were fitted using the equation g false( 2 false) false( t false) = 1 − a e − false| t false| / τ , following the procedure in refs − . Here a represents the purity of the single photon source such that a = 1 – g (2) ( t = 0) and τ represents the lifetime of the QD.…”

mentioning

confidence: 99%

Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens’ Metasurfaces

Iyer,

Prescott,

Addamane

et al. 2024

Nano Lett.

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Advancements in photonic quantum information systems (QIS) have driven the development of high-brightness, on-demand, and indistinguishable semiconductor epitaxial quantum dots (QDs) as single photon sources. Strain-free, monodisperse, and spatially sparse local-droplet-etched (LDE) QDs have recently been demonstrated as a superior alternative to traditional Stranski−Krastanov QDs. However, integration of LDE QDs into nanophotonic architectures with the ability to scale to many interacting QDs is yet to be demonstrated. We present a potential solution by embedding isolated LDE GaAs QDs within an Al 0.4 Ga 0.6 As Huygens' metasurface with spectrally overlapping fundamental electric and magnetic dipolar resonances. We demonstrate for the first time a position-and size-independent, 1 order of magnitude increase in the collection efficiency and emission lifetime control for single-photon emission from LDE QDs embedded within the Huygens' metasurfaces. Our results represent a significant step toward leveraging the advantages of LDE QDs within nanophotonic architectures to meet the scalability demands of photonic QIS.

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Measurement of the Emission Lifetime of a GaN Interface Fluctuation Quantum Dot by Power Dependent Single Photon Dynamics

Cited by 8 publications

References 39 publications

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures

III-nitride quantum dots as single photon emitters

Control of Quantized Spontaneous Emission from Single GaAs Quantum Dots Embedded in Huygens’ Metasurfaces

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