III-nitride quantum dots as single photon emitters

Holmes, Mark; Arita, Munetaka; Arakawa, Yasuhiko

doi:10.1088/1361-6641/ab02c8

Cited by 33 publications

(21 citation statements)

References 146 publications

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“…In Fig. 3 a, E XX bind values found in the literature are plotted along with the two QDs presented in this work [30,48,49]. A trend of increasing E XX bind as a function of emission energy can be deduced.…”

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confidence: 83%

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

et al. 2020

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Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g (2) (0) = 0.17±0.08 under continuous wave excitation. At this temperature, single photon emission rates up to 6 × 10 6 s −1 are reached while g (2) (0) ≤ 0.5 is maintained. Our results are achieved for GaN QDs embedded in a planar AlN layer grown on silicon, representing a promising pathway for future interlinkage with optical waveguides and cavities. These samples allow exploring the limiting factors to key performance metrics for single photon sources, such as brightness and single photon purity. While high brightness is assured by large exciton binding energies, the single photon purity is mainly affected by the spectral overlap with the biexcitonic emission. Thus, the performance of a GaN QD as a single photon emitter depends on the balance between the emission linewidth and the biexciton binding energy. We identify small GaN QDs with an emission energy in excess of 4.2 eV as promising candidates for future room temperature applications, since the biexciton binding energy becomes comparable to the average emission linewidth of around 55 meV.Quantum dots (QDs) based on III-V semiconductors have attracted a lot of attention for their use as nonclassical light sources, with the single photon source being the simplest and most elemental representative. Such a source of single photons should be as bright as possible, while retaining a high single photon purity [1, 2]. However, key metrics for such QD-based single photon sources are usually achieved at cryogenic temperatures with the seminal In(Ga)As/(Al)GaAs system [3][4][5]. Identifying a material platform that can enable sufficiently performant single photon sources up to room temperature remains a challenging quest. In this respect, the main contenders are point defects in wide-bandgap semiconductors (2D materials [6] and bulk semiconductors [7, 8]), nitrogen and silicon vacancies in diamond [9], as well as semiconductor QDs [10][11][12]. It would be advantageous to employ a material system with high integrability into a suitable photonic environment that offers epitaxial control. In this regard, III-nitrides offer a unique possibility as bipolar doping can be achieved, foreign and homoepitaxial substrates are available, and growth and processing techniques are well established, leading to their widespread implementation at an industrial scale for solid state lighting.III-nitrides have shown promising advances in terms of single photon emission (SPE) by employing GaN/AlN [13,14], GaN/AlGaN [15,16] and InGaN/GaN QDs [17][18][19][20][21]. Furthermore, SPE at temperatures as high as 350 K [22] and two-photon emission up to 50 K [23] have been demonstrated. The progress towards room temperature operation is directly linked to the exciton-phonon coupling. With rising temperature the phonon bath becomes * sebastian.tamariz...

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confidence: 83%

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

et al. 2020

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“…In all cases, we observe a clear fluctuation in the emission energy of the dot, occurring on time scales on the order of a few seconds, as is typically observed in III-nitride QDs. 26,38,39 We integrate these spectra to acquire averaged emission spectra for each excitation wavelength, which we present in Fig. 2(b).…”

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confidence: 99%

Spectral diffusion time scales in InGaN/GaN quantum dots

Kang

Springbett

Zhu

et al. 2019

Applied Physics Letters

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A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both time-varying emission spectra and single photon emission intensity autocorrelation times. Excitation dependent phenomena are investigated via the optical excitation of carriers into the GaN barrier material and also directly into InGaN. Excitation into InGaN reveals that the fastest environmental fluctuations occur on timescales as long as a few hundreds of nanoseconds: an order of magnitude longer than previously measured in GaN QDs. Such long time scales may in future allow for the generation of indistinguishable photons in spite of the fact that the experimentally measured linewidths are broad.

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“…phosphides [45][46][47][48], and nitrides [49][50][51][52][53] are required. In particular, the direct band gaps of GaN (3.4 eV) [54,55], AlN (6.1 eV) [56] and InN (0.7 eV) [56,57] can be used to achieve large band offsets through either binary (e.g.…”

Section: Nitride Quantum Dotsmentioning

confidence: 99%

Nitride single photon sources

Holmes

Oliver

2021

Semiconductor Nanodevices

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Non-polar nitride single-photon sources are developed in order to minimise the undesired side effects caused by the internal fields of polar nitrides, while retaining the benefits of high-temperature single-photon generation from a semiconductor quantum dot platform. As a relatively newer single-photon source, several reports have already been made highlighting their interesting optical and photophysical properties. These include an average ultrafast radiative exciton recombination lifetime of < 200 ps, an average slow-timescale spectral diffusion of < 40 µeV, polarisation-controlled singlephoton generation up to 220 K, and temperature-dependent fine-structure splitting. In this review, the photophysics, improvement of optical properties, and future of nonpolar nitride single-photon sources will be closely examined based on current reports in the literature.

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III-nitride quantum dots as single photon emitters

Cited by 33 publications

References 146 publications

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Spectral diffusion time scales in InGaN/GaN quantum dots

Nitride single photon sources

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