Nitride single photon sources

Abstract

Non-polar nitride single-photon sources are developed in order to minimise the undesired side effects caused by the internal fields of polar nitrides, while retaining the benefits of high-temperature single-photon generation from a semiconductor quantum dot platform. As a relatively newer single-photon source, several reports have already been made highlighting their interesting optical and photophysical properties. These include an average ultrafast radiative exciton recombination lifetime of < 200 ps, an average slow-timescale spectral diffusion of < 40 µeV, polarisation-controlled singlephoton generation up to 220 K, and temperature-dependent fine-structure splitting. In this review, the photophysics, improvement of optical properties, and future of nonpolar nitride single-photon sources will be closely examined based on current reports in the literature.

Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

“…33,34 GaN could be one of the semiconductors if further studies could prove it feasible. 35 One of the most relevant properties of GaN for quantum applications is the possibility of making GaN QDs of high quality using self-assembly processes, an approach referred to as "bottom-up", 36 relying on their growth via epitaxy on other materials. This process permits quantum confinement in three dimensions without nanofabrication lithographic approaches, which generally damage the materials and reduce or suppress their relevant quantum properties.…”

“…SPS from InGaN/GaN QDs in fragmented quantum wells the (f) PL centered at 435 nm and (g) very pure g (2) (0) values using laser pulsed excitation. Reprinted from ref with permission from Elsevier.…”