Measurement of the ionization rates in diffused silicon p-n junctions

Overstraeten, R. Van; Man, Harry de

doi:10.1016/0038-1101(70)90139-5

Cited by 751 publications

(240 citation statements)

References 12 publications

Supporting

Mentioning

224

Contrasting

Unclassified

Order By: Relevance

“…[5] and the parameterizations of the ionization coefficients from Ref. [6]. The resulting values of w has then been varied, until the calculated breakdown-probability curve matched the P DE data.…”

Section: Photodetection-breakdown Voltage V P Dmentioning

confidence: 99%

Study of the breakdown voltage of SiPMs

Chmill

Garutti

Klanner

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15×15, 25×25, 50×50, and 100×100 µm 2 , manufactured by KETEK, has been investigated. From the currentvoltage characteristics measured with and without illumination by LED light of 470 nm wavelength, the current-breakdown voltage, V I , and from linear fits of the voltage dependence of the SiPM gain, measured by recording pulse-area spectra, the gain-breakdown voltage, V G , have been obtained. The voltage dependence of the Geiger-breakdown probability was determined from the fraction of zero photoelectron events with LED illumination. By comparing the results to a model calculation, the photodetection-breakdown voltage, V P D , has been determined. Within experimental uncertainties, V I and V P D are equal and independent of pixel size. For V G , a dependence on pixel size is observed. The difference V I − V G is about 1 V for the SiPM with 15 µm pixels, decreases with pixel size and is compatible with zero for the SiPM with 100 µm pixels.

show abstract

Section: Photodetection-breakdown Voltage V P Dmentioning

confidence: 99%

Study of the breakdown voltage of SiPMs

Chmill

Garutti

Klanner

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

show abstract

“…The Keld ish solution attracted the attention because it tends to the Wolff relation (exp[-C/ζ 2 ]) at high fields and tends to a simp le exponential exp[-C'/|ζ|] (where C' is another constant) at moderate fields, which coincides with the experiment. In fact, the measurements of Chynoweth [74], Lee et al [77], Van Overstraten and Deman [78], Kotani and Kawazu [79], Maes [80] and Takayangi [81] showed that the impact ionization rate at moderate fields fo llo w a simp le exponential function. According to Grant's model [82], the electron impact ionization rate fo llo ws the following exponential relation:…”

Section: Impact Ionizati On Ratementioning

confidence: 99%

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

El-Saba¹

2013

MSSE

View full text Add to dashboard Cite

In this paper we present a complete hydrodynamic model (HDM) describing the transport of charge carriers in semiconductor devices with arbitrary band structure. The model is appended with advanced physical models fo r almost all the physical parameters of interest in modern Si Devices. These parameters are inter-related v ia the carrier energy relaxation time. An improved analytical model of the carrier heat flu x, on the basis of a fourth mo ment of the Bolt zmann transport equation (BTE), is also presented. In order to resolve the heat evacuation problems in SOI and power devices, the model is coupled with a lattice heat conservation equation. The transport of hot carriers is simu lated, according to the proposed HDM and the results are compared with the conventional data obtained using the drift-diffusion model (DDM) and MC simu lation. We show from the HD simu lation, the effect of the energy relaxat ion time value on the hot carrier transport in general and the breakdown voltage in particu lar, of both MOSFETs and bipolar devices.

show abstract

“…In particular, the mobility degradation due to surface roughness arising from the dry etch of the vertical pillar was accounted for by adjusting the surface roughness factor to δ(elec) = 2.91 × 10 13 V/S and δ(holes) = 1.027 × 10 13 V/S in the model. Impact ionization was modeled by the Selberherr law for the generation rate, and the model parameters have already been optimized for submicrometer bulk silicon transistors [26]. The Shockley-Read-Hall (SRH) electron and hole lifetimes τ n and τ p were modeled as concentration dependent.…”

Section: Modeling Proceduresmentioning

confidence: 99%

“…The Shockley-Read-Hall (SRH) electron and hole lifetimes τ n and τ p were modeled as concentration dependent. The simulations were performed at room temperature, and the silicon parameter values were taken from [23] and [26]. The model was calibrated against experimental VMOS characteristics [13] for a substrate-doping concentration of 10 18 /cm 3 and source/drain doping densities taken from SIMS profiles [13].…”

Section: Modeling Proceduresmentioning

confidence: 99%

Depletion-isolation effect in vertical MOSFETs during the transition from partial to fully depleted operation

Hakim

Groot

Gili

et al. 2006

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

929is attributed to the absence of gate depletion but of a comparable gate resistance. However, it is important to mention that for device architectures (FinFET, FD-SOI) that require a higher gate work function, the RF performance of deposited metal-gate devices will be reduced. ACKNOWLEDGMENTThe authors would like to thank all the people involved in the 45-nm CMOS Joint Research Program of Philips and Interuniversity MicroElectronics Center. REFERENCES[1] L. Larson, "Silicon technology tradeoffs for radio-frequency/mixed-signal 'systems-on-a-chip'," IEEE Trans. Electron Devices, vol. 50, no. 3, pp. 683-699, Mar. 2003 Abstract-A simulation study is made of floating-body effects (FBEs) in vertical MOSFETs due to depletion isolation as the pillar thickness is reduced from 200 to 10 nm. For pillar thicknesses between 200-60 nm, the output characteristics with and without impact ionization are identical at a low drain bias and then diverge at a high drain bias. The critical drain bias V dc for which the increased drain-current is observed is found to decrease with a reduction in pillar thickness. This is explained by the onset of FBEs at progressively lower values of the drain bias due to the merging of the drain depletion regions at the bottom of the pillar (depletion isolation). For pillar thicknesses between 60-10 nm, the output characteristics show the opposite behavior, namely, the critical drain bias increases with a reduction in pillar thickness. This is explained by a reduction in the severity of the FBEs due to the drain debiasing effect caused by the elevated body potential. Both depletion isolation and gate-gate coupling contribute to the drain-current for pillar thicknesses between 100-40 nm.

show abstract

Measurement of the ionization rates in diffused silicon p-n junctions

Cited by 751 publications

References 12 publications

Study of the breakdown voltage of SiPMs

Study of the breakdown voltage of SiPMs

Yet Another Hydrodynamic Model with Correlated Parameters for Silicon Devices

Depletion-isolation effect in vertical MOSFETs during the transition from partial to fully depleted operation

Contact Info

Product

Resources

About