“…Thus, the a H -factor appears as an optical power-dependent parameter strongly influenced by nonlinear gain and/or carrier-heating effects (Agrawal, 1990). Finally, the modified linewidth method relies on the measurement of SL's linewidth as a function of emitted power under and above the laser's threshold, and the ratio of the slopes of the curves linewidth as a function of the inverse power gives directly the a H -factor value (Villafranca et al, 2005). This accumulation of carriers in the ES arises even though lasing in the GS is still occurring and therefore increases the effective a H -factor of the GS transition introducing a nonlinear dependence with the injected current (Grillot et al, 2008b).…”
Section: Major Experimental Techniques For Measuring the A H -Factormentioning
“…Thus, the a H -factor appears as an optical power-dependent parameter strongly influenced by nonlinear gain and/or carrier-heating effects (Agrawal, 1990). Finally, the modified linewidth method relies on the measurement of SL's linewidth as a function of emitted power under and above the laser's threshold, and the ratio of the slopes of the curves linewidth as a function of the inverse power gives directly the a H -factor value (Villafranca et al, 2005). This accumulation of carriers in the ES arises even though lasing in the GS is still occurring and therefore increases the effective a H -factor of the GS transition introducing a nonlinear dependence with the injected current (Grillot et al, 2008b).…”
Section: Major Experimental Techniques For Measuring the A H -Factormentioning
“…There are mainly three categories of measurement methods: those relying in the measurement of the phase noise in the optical spectrum [17][18][19], those based on modulating the laser and analyze the frequency chirp [11,12,[20][21][22][23], and those based on optical feedback and the Lang-Kobayashi theory [9,10,24].…”
We present a theoretical and experimental research of the linewidth enhancement factor or factor in multiplelongitudinal mode semiconductor lasers. In this work, several methods originally developed for single-mode lasers have been adapted for their use with multiple-longitudinal mode lasers and applied to each mode of several Fabry-Perot lasers at a time. The concepts of material LEF and device LEF are compared and discussed.
“…b) The Linewidth method measures the spectrum linewidth and fits the results to known parameters, so that the α-factor can be extracted by applying Henry formula (equation (26) [2]). c) The Modified Linewidth method measures the linewidth in terms of the emitted power in the threshold region, and the ratio of the slope of the linewidth vs. inverse power curve gives directly the α-factor [3]. d) The FM/AM method [4] relies on high-frequency current modulation which generates both amplitude (AM) and optical frequency (FM) modulation.…”
Section: A Survey Of the Measurment Techniquesmentioning
Abstract:A first-order frequency-dependent formula of the linewidth broadening factor (α-factor) is derived in terms of scattering rates whilst, a mesoscopic disk approach is used in order to accompany the dimension effect to the spontaneous emission lifetime (inverse of scattering rate). An excitonic correction to the relaxation properties is shown to occur provided the binding energy of the electron and hole is comparable to their eigenenergy-separation. The ensuing analysis is independent of the selected III-V material system and resides upon three simplifying assumptions which allow for analytical formulae to be derived.
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