Measurement of the minority-carrier transport parameters in heavily doped silicon

Mertens, R.; Meerbergen, J. van; Nijs, J.; Overstraeten, R.J. Van

doi:10.1109/t-ed.1980.19962

Cited by 99 publications

(20 citation statements)

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“…(21), and gives good agreement for m,/m x mp/m = 1.1 and a majority carrier concentration n or p 2 2 5 x lOI9 0111-3.…”

mentioning

confidence: 77%

“…Lastly we wish to point out that the band-gap shrinkage in doped material has important contributions from one band only: the screening parameter A depends then on one concentration. For high optical excitation, however, both electrons and holes contribute to the screening parameters, which is thus substantially increased (see (21)). This results in a larger band-gap shrinkage, if the effects of any impurity-bands or tail states are neglected.…”

Section: Comparison With Experimentsmentioning

confidence: 99%

See 1 more Smart Citation

A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon

Landsberg

Neugroschel

Lindholm

et al. 1985

Physica Status Solidi (b)

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A model for band-gap shrinkage in semiconductors is developed and applied to silicon. A survey of earlier experiments, and of new ones obtained by the authors, gives agreement between the model and experiments on n-and p-type silicon which is good as far as transport measurements in the N 300 K range by various authors are concerned. I n fact, the discrepancies between theory and experiment are no worse than the discrepancies between the experimental results of various authors. It also gives a good account of recent optical determinations of the band-gap shrinkage a t 5 K. The model is based on Debye screening and, apart from effective masses, temperature, dielectric constant, and carrier concentrations, which must enter any theory of gap shrinkage in some form, it is parameter-free. The model gives in Gaussian units AE, = 126.6(m*/m)1/2 x x (~/ l O ) -3 / 2 (n/1018)116 meV in the degenerate limit.Es wird ein Modell fur die Bandluckenschrumpfung in Halbleitern entwickelt und auf Silizium angewendet. Ein uberblick iiber fruhere Experimente und neuere von den Autoren gibt ubereinstimmung zwischen Modell und Experimenten fur n-und p-leitendes Silizium, die gut ist, sofern sie Transportmessungen im = 300 K-Bereic h von verschiedenen Autoren betrifft. Tatsiichlich sind die Diskrepanzen zwischen Theorie und Experiment nicht grol3er als die Unterschiede zwischen den experimentellen Ergebnissen verschiedener Autoren. Es liefert auch eine gute Erkliirung der neueren optischen Bestimmungen der Bandliickenschrumpfung bei 5 K. Das Modell berulit auf der Debye-Abschirmung und abgeselien von effektiven Massen, Temperatur, Dielektrizitittskonstante und Ladungstriigerkonzentration, die in irgendeiner Form in jede Theorie der Bandluckenschrumpfung eingehen mussen, ist es parameterfrei. Das Modell liefert AE, = = 126,6(m*/m)1/2 (e/lO)-3/2 (n/l0l8)1/e meV in GauBschen Einheiten im Entartungsgrenzfall. ___--_Gainesville, Florida 32 61 1, USA. 2, Permanent address :

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“…(21), and gives good agreement for m,/m x mp/m = 1.1 and a majority carrier concentration n or p 2 2 5 x lOI9 0111-3.…”

mentioning

confidence: 77%

Section: Comparison With Experimentsmentioning

confidence: 99%

A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon

Landsberg

Neugroschel

Lindholm

et al. 1985

Physica Status Solidi (b)

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“…This has already been investigated by numerous authors [25]- [31]. The relationship obtained empirically by Kendall [quoted in [18]], is frequently used at the moment, according to which the lifetime in this range is calculated as 'to 't = -----ND (3.4.17) 1 + 7 X 10 15 In this equation the carrier lifetime 'to in pure, undoped silicon was previously assumed to be 400 JIS.…”

Section: Recombination By Dopingmentioning

confidence: 99%

The Principles of Photovoltaics

Goetzberger¹,

Knobloch²,

Voß³

2014

Crystalline Silicon Solar Cells

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“…Different techniques have been adopted to measure the BGN Manuscript but they refer to specific materials (i.e., epitaxial layer [2]), specific device properties (e.g., β in a bipolar transistor [3]), or they employ approximations (e.g., low injection, uniform doping [4], [5]). The effect of BGN on the performance of the bipolar junction transistors is well known and has been intensively analyzed in the past [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Bandgap Narrowing on Performance of Modern Power Devices

Camuso

Napoli

Pathirana

et al. 2013

IEEE Trans. Electron Devices

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The effect of the bandgap narrowing (BGN) on performance of power devices is investigated in detail in this paper. The analysis reveals that the change in the energy band structure caused by BGN can strongly affect the conductivity modulation of the bipolar devices resulting in a completely different performance. This is due to the modified injection efficiency under high-level injection conditions. Using a comprehensive analysis of the injection efficiency in a p-n junction, an analytical model for this phenomenon is developed. BGN model tuning has been proved to be essential in accurately predicting the performance of a lateral insulated-gate bipolar transistor (IGBT). Other devices such as p-i-n diodes or punch-through IGBTs are significantly affected by the BGN, while others, such as field-stop IGBTs or power MOSFETs, are only marginally affected.Index Terms-Bandgap narrowing, insulated-gate bipolar transistor (IGBT), power devices, high voltage.

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Measurement of the minority-carrier transport parameters in heavily doped silicon

Cited by 99 publications

References 0 publications

A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon

A Model for Band‐Gap Shrinkage in Semiconductors with Application to Silicon

The Principles of Photovoltaics

Effect of Bandgap Narrowing on Performance of Modern Power Devices

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