2004
DOI: 10.1063/1.1808244
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Measurement of the state of stress in silicon with micro-Raman spectroscopy

Abstract: Micro-Raman spectroscopy has been widely used to measure local stresses in silicon and other cubic materials. However, a single (scalar) line position measurement cannot determine the complete stress state unless it has a very simple form such as uniaxial. Previously published micro-Raman strategies designed to determine additional elements of the stress tensor take advantage of the polarization and intensity of the Raman-scattered light, but these strategies have not been validated experimentally. In this wor… Show more

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Cited by 49 publications
(26 citation statements)
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“…[16][17][18][19] It is important to directly measure Si lattice stress instead of estimating film stress from the curvature of blanket Si wafers before * Electrochemical Society Active Member.…”
Section: -15mentioning
confidence: 99%
See 1 more Smart Citation
“…[16][17][18][19] It is important to directly measure Si lattice stress instead of estimating film stress from the curvature of blanket Si wafers before * Electrochemical Society Active Member.…”
Section: -15mentioning
confidence: 99%
“…[11][12][13][14][15] Multiwavelength Raman spectroscopy has been widely used in lattice stress characterization of various types (blanket, patterned) of Si wafers. [16][17][18][19] It is important to directly measure Si lattice stress instead of estimating film stress from the curvature of blanket Si wafers before * Electrochemical Society Active Member.…”
mentioning
confidence: 99%
“…As shown in Figure 5(b), the sample is loaded in the y-direction by an applied strain. Loading direction stresses on the surface of the water are experimentally evaluated by micro-Raman spectroscopy executed by Harris et al [60,61]. Two eutectic Si particles are singled out for interrogation.…”
Section: Comparison Of Inclusion Stresses Obtained By Raman Spectroscmentioning
confidence: 99%
“…[29][30][31] This method involves the linking of three elements by the linear deformation potential theory. These elements are:…”
Section: Methods Descriptionmentioning
confidence: 99%
“…The first relates to materials used in microelectronics and micro electro-mechanical (MEMS) manufacturing, [21][22][23][24][25][26][27][28][29][30][31][32] and the other relates to photonic materials. [33][34][35][36] These photonic materials are used as bulk material for the generation of optical and electro-optical circuits.…”
Section: 2mentioning
confidence: 99%