2017
DOI: 10.1186/s11671-017-2075-z
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Measurements of Defect Structures by Positron Annihilation Lifetime Spectroscopy of the Tellurite Glass 70TeO2-5XO-10P2O5-10ZnO-5PbF2 (X = Mg, Bi2, Ti) Doped with Ions of the Rare Earth Element Er3+

Abstract: The objective of the study was the structural analysis of the 70TeO2-5XO-10P2O5-10ZnO-5PbF2 (X = Mg, Bi2, Ti) tellurite glasses doped with ions of the rare-earth elements Er3+, based on the PALS (positron annihilation lifetime spectroscopy) method of measuring positron lifetimes. Values of positron lifetimes and the corresponding intensities may be connected with the sizes and number of structural defects, the sizes of which range from a few angstroms to a few dozen nanometers. Experimental positron lifetime s… Show more

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Cited by 6 publications
(4 citation statements)
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“…In all the investigated tellurite glass systems, the third component τ 3 with a value above 1 ns was obtained. This has not been achieved in studies conducted so far [ 3 , 19 , 21 ]. Obtaining the third component was probably possible by increasing the amount of the admixture (twice).…”
Section: Resultsmentioning
confidence: 78%
See 1 more Smart Citation
“…In all the investigated tellurite glass systems, the third component τ 3 with a value above 1 ns was obtained. This has not been achieved in studies conducted so far [ 3 , 19 , 21 ]. Obtaining the third component was probably possible by increasing the amount of the admixture (twice).…”
Section: Resultsmentioning
confidence: 78%
“…Results of these measurements show that due to doping of tellurite glasses with erbium ions containing the optimal amount of erbium oxide (1200 ppm), it is possible to obtain the τ 3 component and its I 3 intensity, values related to the formation of ortho-positronium as well as the distribution of the density of the formation of free volumes. Notably, the research for the tellurite glasses presented in [ 21 ] could not obtain these values.…”
Section: Discussionmentioning
confidence: 99%
“…They studied the concentration of threedimensional vacancy clusters in nanocrystalline TiO 2 during annealing in the presence of O 2 and Ar. A number of defect state studies have been performed on different semiconductors such as ZnS [89], CdTe:Cl [90], CdZnTe:Ge [90], rare earth doped tellurite glasses [91], SrTiO 3 [92], GaN [93], SiC [94] and Group III nitrides [95]. The positron lifetime is proportional to the density of electrons at annihilation sites.…”
Section: Point Defects In Tiomentioning
confidence: 99%
“…Scanning electron microscopy is an appropriate method for characterization of porosity and pore size of the surface of implants. Values of positron lifetimes and the corresponding intensities measured by positron annihilation lifetime spectroscopy may be connected with the size and the structural defects of implants [15].…”
Section: Introductionmentioning
confidence: 99%