1966
DOI: 10.1103/physrev.150.703
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Measurements of X-Ray Lattice Constant, Thermal Expansivity, and Isothermal Compressibility of Argon Crystals

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Cited by 346 publications
(88 citation statements)
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“…23,24 First, we have performed benchmark calculations using the DFT/ PBE-D2 method and four solid systems, Ne, Ar, Kr and Si, as a test bed, as both experimental and previous DFT/PBE-D2 calculation results for these elemental solids and their lattice constants are available. [28][29][30][31][32][33] As shown in the Appendix, our DFT/PBE-D2 calculations reproduce recent theoretical results for these systems very well. 32 However, one difference between DFT/PBE-D2 and DFT/PW91-vdW result of Si is found, which will be discussed below.…”
supporting
confidence: 70%
“…23,24 First, we have performed benchmark calculations using the DFT/ PBE-D2 method and four solid systems, Ne, Ar, Kr and Si, as a test bed, as both experimental and previous DFT/PBE-D2 calculation results for these elemental solids and their lattice constants are available. [28][29][30][31][32][33] As shown in the Appendix, our DFT/PBE-D2 calculations reproduce recent theoretical results for these systems very well. 32 However, one difference between DFT/PBE-D2 and DFT/PW91-vdW result of Si is found, which will be discussed below.…”
supporting
confidence: 70%
“…The effect of the impurity mass on the quantum delocalization is important at low temperatures, as shown in Fig. 24, where dashed and continuous lines correspond to projections of the impurity density on the [110] silicon axis for D and H, respectively, at 40 K. The deuterium distribution has the usual shape for particles undergoing semiclassical motion, in line with the fact that at T ≥ 40 K a linear Arrhenius plot was found for this impurity 220 . The diffusion of H and D in crystalline silicon was also studied by path-integral methods in Ref.…”
Section: B Diffusionsupporting
confidence: 54%
“…This provides information on the delocalization of the considered particle in the two potential wells, corresponding to two adjacent energy minima (BC sites). A projection of the probability density of hydrogen in silicon along the [110] crystal direction is displayed in Fig. 23.…”
Section: B Diffusionmentioning
confidence: 99%
“…First, we determined the absolute pressure drop ΔP Ar (i.e., 4 mTorr) in the manifold to grow a (111) monolayer of a solid film of Ar (Matheson of Canada Ltd., 99.9995%) on the Pt substrate. 33,34 Given the value of ΔP Ar and taking the atomic density of an Ar monolayer (n Ar ) as that corresponding to a (111) plane in the bulk of solid Ar at 20 K (i.e., n Ar = 8.167 × 10 14 cm −2 ), 35,36 the ΔP for a gas or vapor was thus converted into a surface number density (n S ) with the relation n S = (n Ar /ΔP Ar )ΔP. 37 The uncertainty in this n S value arises essentially from the error in the individual pressure measurement ΔP at ±2.5% and in the value taken for n Ar at ±5% for a combined uncertainty of ±10%.…”
Section: Methodsmentioning
confidence: 99%