Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 51-µm laser

Agustsson, R.; Arab, E.; Murokh, A.; O’Shea, Brendan; Ovodenko, A.; Pogorelsky, Igor; Rosenzweig, James; Solovyov, Vyacheslav; Tilton, R. A.

doi:10.1364/ome.5.002835

Cited by 14 publications

(6 citation statements)

References 27 publications

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“…The knowledge on damage threshold is also important for a new fascinating mid-IR application of dielectric laser accelerators (DLAs) 13 , 14 . In the mid-IR spectral region, promising materials for on-chip DLA technology are dielectric materials, which have a higher material damage threshold compared to silicon 14 , 15 . Well-developed applications such as ultrafast laser materials processing 16 and direct laser writing 17 may also have advantages in switching from visible and near-IR to mid-IR.…”

Section: Introductionmentioning

confidence: 99%

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR

Migal

Mareev

Smetanina

et al. 2020

Sci Rep

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the development of high power mid-iR laser applications requires a study on laser induced damage threshold (LIDT) in the mid-IR. In this paper we have measured the wavelength dependence of the plasma formation threshold (PFT) that is a LIDT precursor. In order to interpret the observed trends numerically, a model describing the laser induced electron dynamics, based on multiple rate equations, has been developed. We show both theoretically and experimentally that PFT at mid-IR wavelengths is controlled by a transition from weak-to strong-field regime of free carrier absorption. in the case of Mgf 2 this transition occurs around 3-4 µ m corresponding to the region of the lowermost PFT. The region of the uppermost PFT is reached around 1 µ m and is governed by an interplay of photoionization and weak-field free carrier absorption which manifests itself in both MgF 2 and Sio 2. The PFT observed in considered materials exhibits a universal dependence on the excitation wavelength in dielectrics. Thus, the presented results pave the route towards efficient and controllable laser-induced material modifications and should be of direct interest to laser researchers and application engineers for prevention of laser-induced damage of optical components in high-intensity mid-IR laser systems. Recent advances in the development of ultra-short laser sources in mid-and far-infrared (IR) regions 1-8 lead to a vast number of new applications. However, a primary technological challenge still relevant for researches is the manufacturing of optical components with high laser-induced damage threshold and desired properties (for instance, high transparency or reflectivity in a wide wavelength range, group delay, etc.). This implies a need for experimental investigation of material damage threshold in the IR spectral region 9,10. Thin-films made of multi-layer stacks of low (fluorides, SiO 2) and high (silicon, germanium) refractive index materials are a key component of high-performance coatings in the mid-IR. Fluorides are also popular host matrices for mid-IR solid-state 11 and fiber lasers 12. The knowledge on damage threshold is also important for a new fascinating mid-IR application of dielectric laser accelerators (DLAs) 13,14. In the mid-IR spectral region, promising materials for on-chip DLA technology are dielectric materials, which have a higher material damage threshold compared to silicon 14,15. Well-developed applications such as ultrafast laser materials processing 16 and direct laser writing 17 may also have advantages in switching from visible and near-IR to mid-IR. A promising way for controlling the energy deposition inside transparent dielectric materials is to use a two-color ultrafast excitation 18-24. In this scheme a long wavelength heating pulse is more advantageous due to favorable scaling of avalanche ionization (AI) rate and free electron absorption. However, a lack of knowledge of the laser-induced damage threshold (LIDT) dependence on the wavelength prevents the optimization of such a concept.

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Section: Introductionmentioning

confidence: 99%

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR

Migal

Mareev

Smetanina

et al. 2020

Sci Rep

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“…Regarding the limitations of operating the SA at the current stage, the pumping power required at the mode-locking threshold is 97 mW. The upper pumping limitation of the EDFL is set by the optical damage threshold of the SA at about 0.2 J/cm 2 [ 62 ], which is far beyond the operating condition with an intra-cavity optical pulsed energy intensity of <2 mJ/cm 2 under the current pumping case.…”

Section: Resultsmentioning

confidence: 99%

Low-Temperature PECVD Growth of Germanium for Mode-Locking of Er-Doped Fiber Laser

et al. 2022

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A low-temperature plasma-enhanced chemical vapor deposition grown germanium (Ge) thin-film is employed as a nonlinear saturable absorber (SA). This Ge SA can passively mode-lock the erbium-doped fiber laser (EDFL) for soliton generation at a central wavelength of 1600 nm. The lift-off and transfer of the Ge film synthesized upon the SiO2/Si substrate are performed by buffered oxide etching and direct imprinting. The Ge film with a thickness of 200 nm exhibits its Raman peak at 297 cm−1, which both the nanocrystalline and polycrystalline Ge phases contribute to. In addition, the Ge thin-film is somewhat oxidized but still provides two primary crystal phases at the (111) and (311) orientations with corresponding diffraction ring radii of 0.317 and 0.173 nm, respectively. The nanocrystalline structure at (111) orientation with a corresponding d-spacing of 0.319 nm is also observed. The linear and nonlinear transmittances of the Ge thin-film are measured to show its self-amplitude modulation coefficient of 0.016. This is better than nano-scale charcoal and carbon-black SA particles for initiating the mode-locking at the first stage. After the Ge-based saturable absorber into the L-band EDFL system without using any polarized components, the narrowest pulsewidth and broadest linewidth of the soliton pulse are determined as 654.4 fs and 4.2 nm, respectively, with a corresponding time–bandwidth product of 0.32 under high pumping conditions.

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“…The damage threshold at 10 ps pulse width and 1064 nm wavelength was 0.78 J cm −2 [37]. According to [37,38], the damage threshold increased with the growth of the laser pulse width and the decrease of the laser wavelength. Our exciting pulse widths were 40 and 30 ps with wavelengths of 1064 and 532 nm.…”

Section: Nla Experimentsmentioning

confidence: 96%

Nonlinear absorption properties of silicene nanosheets

Zhang

Wang

et al. 2018

Nanotechnology

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As the cousins of graphene, i.e. same group IVA element, the nonlinear absorption (NLA) properties of silicene nanosheets were rarely studied. In this paper, we successfully exfoliated the two-dimensional silicene nanosheets from bulk silicon crystal using liquid phase exfoliation method. The NLA properties of silicene nanosheets were systemically investigated for the first time, as we have known. Silicene performed exciting saturable absorption and two photon absorption (2PA) behavior. The lower saturable intensity and larger 2PA coefficient at 532 nm excitation indicates that silicene has potential application in ultrafast lasers and optical limiting devices, especially in visible waveband.

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Measuring single-shot, picosecond optical damage threshold in Ge, Si, and sapphire with a 51-µm laser

Cited by 14 publications

References 27 publications

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR

Role of wavelength in photocarrier absorption and plasma formation threshold under excitation of dielectrics by high-intensity laser field tunable from visible to mid-IR

Low-Temperature PECVD Growth of Germanium for Mode-Locking of Er-Doped Fiber Laser

Nonlinear absorption properties of silicene nanosheets

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