Measuring Techniques for the Semiconductor’s Parameters

High-precision Helicobacter pylori infection diagnosis using a dual-element multimodal gas sensor array

“…rGO is a p-type semiconductor, 71 and its relationship between conductivity and carrier (hole) is given using formula (1), 72 where ρ is the resistivity, n is the carrier concentration, q is the charge constant, and μ is the carrier mobility. 73 Typically, charges transfer from electron-donating gases (generally reducing gases) to the gas-sensing material, decreasing the carrier concentration of rGO and thus the conductance.…”

“…where ρ is the resistivity, n is the carrier concentration, q is the charge constant, and μ is the carrier mobility. 73 Typically, charges transfer from electron-donating gases (generally redu-cing gases) to the gas-sensing material, decreasing the carrier concentration of rGO and thus the conductance. The C signal is related to the polarizability which is influenced by the molecular structure and electron distribution of the gas molecules.…”

Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy

“…SSRM is an excellent technique for the study of doping concentration within GaN-based layers. [14] It is based on atomic force microscopy (AFM), however since it is conducted in contact mode and high forces are applied to the tip, doped-diamond-coated probes are used. In addition, these probes assist in the penetration of the oxide layer, which typically forms rapidly on the surface.…”