Mechanical alloying boosted SnTe thermoelectrics

Chen, Zhiyu; Sun, Qiang; Zhang, Fujie; Mao, Jianjun; Chen, Yue; Li, Meng; Chen, Zhigang; Ang, Ran

doi:10.1016/j.mtphys.2021.100340

Cited by 31 publications

(33 citation statements)

References 54 publications

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“…30 Such band convergence has very little influence on carrier mobility and hence keeps the power factor high. 19 Similarly, we estimate a decrease in energy offsets in conduction band from 0.24 eV to 0.04 eV and 0.05 eV considering the heavy electron conduction sub-bands (H CB ) at Z point and R point, respectively. This shift in the position of H CB from Z+δ point to Z and R point is a consequence of alterations taking place in the higher energy conduction bands which is explained later.…”

Section: Resultsmentioning

confidence: 73%

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Molybdenum as a versatile dopant in SnTe: a promising material for thermoelectric application

Shenoy

Bhat

2022

Energy Adv.

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Section: Resultsmentioning

confidence: 73%

“…resulting in increased density of states effective mass of carriers and in turn the 'S' values. 13,16,18,19 Dopants which can distort the density of states near the Fermi level i.e., the resonant dopants, are known to improve the performance at lower temperatures. Bi, In, Zn, V and Mn are known to introduce resonance levels in SnTe.…”

Section: Introductionmentioning

confidence: 99%

Molybdenum as a versatile dopant in SnTe: a promising material for thermoelectric application

Shenoy

Bhat

2022

Energy Adv.

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“…Typically, defects can be classified according to their dimensions: 0D point defects, 1D linear defects, 2D planar defects, and 3D body defects. As mentioned in the Introduction section, the scattering rates of defects are frequency dependent 22,25,64,159,160 . The strength of scattering and the resulting reduction in κ lat depend on the type and density of crystal defects.…”

Section: Extrinsic Sources For Slowing Down the Heat Transportmentioning

confidence: 94%

“…To enhance the anharmonicity of a material, it is necessary to generate considerable lattice distortion inside the material to force the atoms to deviate from their equilibrium positions. This can be realized by introducing various crystal defects into the material matrix 25,63–66 . Simultaneously, these extrinsic defects play a key role in strengthening phonon scattering and reducing κ lat 37,67,68 .…”

Section: Introductionmentioning

confidence: 99%

Slowing down the heat in thermoelectrics

Qin

Wang

Zhao

2021

InfoMat

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Heat transport has various applications in solid materials. In particular, the thermoelectric technology provides an alternative approach to traditional methods for waste heat recovery and solid‐state refrigeration by enabling direct and reversible conversion between heat and electricity. For enhancing the thermoelectric performance of the materials, attempts must be made to slow down the heat transport by minimizing their thermal conductivity (κ). In this study, a continuously developing heat transport model is reviewed first. Theoretical models for predicting the lattice thermal conductivity (κlat) of materials are summarized, which are significant for the rapid screening of thermoelectric materials with low κlat. Moreover, typical strategies, including the introduction of extrinsic phonon scattering centers with multidimensions and internal physical mechanisms of materials with intrinsically low κlat, for slowing down the heat transport are outlined. Extrinsic defect centers with multidimensions substantially scatter various‐frequency phonons; the intrinsically low κlat in materials with various crystal structures can be attributed to the strong anharmonicity resulting from weak chemical bonding, resonant bonding, low‐lying optical modes, liquid‐like sublattices, off‐center atoms, and complex crystal structures. This review provides an overall understanding of heat transport in thermoelectric materials and proposes effective approaches for slowing down the heat transport to depress κlat for the enhancement of thermoelectric performance.

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“…[26][27][28][29][30][31] Due to larger anharmonicity and effective phonon scattering, PbTe exhibits lower thermal conductivity than SnTe. [32][33][34][35] Various attempts and strategies have been made in the past to improve the thermoelectric performance in SnTe, which includes selfcompensation in the composition with some additional Sn content; [36,37] electronic bandstructure engineering-fostering resonance state in the vicinity of fermi-level (mostly induced by In as a dopant in SnTe), [27,38] simultaneous increase of principal bandgap and convergence of the light hole and heavy hole valence bands (realized with dopants such as Cd, Hg, Mn, Mg, Ca, and few more), [27,29,36,37,[39][40][41][42][43][44] and this also includes valence band inversion or crossing effects; and a diverse nano-structuration approaches to engineer the dense interstitials, stacking faults, point defects, nano-precipitates and semi-coherent interfaces, dislocations, strain clusters, and so forth, [45][46][47][48][49][50][51][52] (by alloying with Cu 2 Te, CdS, SrTe, ZnS, and a few more). [53] All these approaches and dopants in SnTe, though they yielded an improved thermoelectric performance (zT max > 1), are limited for any practical applications, as their improved performance happened only at higher temperature ranges (usually between 823 and 873 K, or higher) for SnTe-based materials.…”

Section: Introductionmentioning

confidence: 99%

Physical Insights on the Lattice Softening Driven Mid‐Temperature Range Thermoelectrics of Ti/Zr‐Inserted SnTe—An Outlook Beyond the Horizons of Conventional Phonon Scattering and Excavation of Heikes’ Equation for Estimating Carrier Properties

Muchtar

Srinivasan

Tonquesse

et al. 2021

Advanced Energy Materials

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Most of the best known SnTe‐based materials exhibit an attractive thermoelectric figure of merit (zT) only at the high‐temperature regime, but their performance at the low‐mid temperature ranges is quite uninspiring, and this discordance necessitates a large temperature gradient (∆T ≥ 550 K) to effectuate a reasonable efficiency, η. Here, the transition elements, Ti and Zr, that have not been used in the past are tried as dopants for SnTe and an enhanced device/average zT and/or η are reported with a lower ∆T ≈ 400 K and without the requisite for a stupendous peak/maximum zT. This notable performance emanates from—i) improved weighted mobility by optimally balancing between effective mass, carrier concentration, and mobility, ii) coupling of charge carriers with magnetic entropy, and the paramount factor being the iii) weakening of the chemical bonds (lattice softening). The thermal damping caused by lattice softening affects the phonon group velocity and the elastic properties, and the resultant increase in the degree of anharmonicity and the high density of internal strain‐fields, along with the phonon scattering effects, play an active role in tuning the overall thermoelectric performance. This work also excavates/opens up the discussion of applying the Heikes’ equation to qualitatively compare the trend of charge carriers for a given thermoelectric material system.

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Mechanical alloying boosted SnTe thermoelectrics

Cited by 31 publications

References 54 publications

Molybdenum as a versatile dopant in SnTe: a promising material for thermoelectric application

Molybdenum as a versatile dopant in SnTe: a promising material for thermoelectric application

Slowing down the heat in thermoelectrics

Physical Insights on the Lattice Softening Driven Mid‐Temperature Range Thermoelectrics of Ti/Zr‐Inserted SnTe—An Outlook Beyond the Horizons of Conventional Phonon Scattering and Excavation of Heikes’ Equation for Estimating Carrier Properties

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