Mechanical and dielectric properties of silicon dioxide film fabricated from polyphenylcarbosilane

Abstract

Silicon dioxide film derived from polyphenylcarbosilane (PPCS) is being investigated for electronic ceramics and applications to dielectric materials. Polyphenylcarbosilane was heat treated under oxygen atmosphere to fabricate SiO 2 film. The mechanical property and dielectric constant of the film were measured using a nanoindenter and a semiconductor parameter analyser with metal-insulator-semiconductor structure. The chemical behaviour and structure were analysed with an X-ray photoelectron spectrometer and a differential thermal analyser. From the results, the silicon oxide film was synthesised from PPCS due to proper heat treatment. Elastic modulus values of the fired PPCS film were from 8?9 to 27?9 GPa and hardness values of the fired PPCS film were from 0?47 to 2?29 GPa with increasing firing temperature. Change in mechanical properties is related to intermolecular binding strength in the film.