Mechanical and tribological characterization of low-temperature deposited PVD TiN coatings

Hedenqvist, Per; Bromark, Michael; Olsson, Mikael; Hogmark, Sture; Bergmann, E.

doi:10.1016/s0257-8972(05)80015-5

Cited by 50 publications

(20 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Titanium nitride, one of the first hard-coating materials, [13][14][15] serves as a model for NaCl-structure TM nitride compounds and alloys presently used in a wide variety of applications based upon their unique properties: high hardness, 13,16 excellent scratch and abrasion resistance, 17 relatively low coefficient of friction, 18 high-temperature oxidation resistance, [19][20][21] metallic to semiconducting conductivity, 22 optical absorption, which can be tuned across the visible spectrum, 22 and superconductivity. 23,24 Nanocomposites 25 and superlattices 26 based upon TM nitride constituents have been shown to be superhard (hardness 40 GPa).…”

Section: Introductionmentioning

confidence: 99%

Dynamics of Ti, N, and TiNx(x=1–3) admolecule transport on TiN(001) surfaces

et al. 2012

View full text Add to dashboard Cite

We use classical molecular dynamics and the modified embedded atom method formalism to investigate the dynamics of atomic-scale transport on a low-index model compound surface, TiN(001). Our simulations, totaling 0.25 μs for each case study, follow the pathways and migration kinetics of Ti and N adatoms, as well as TiN x complexes with x = 1-3, which are known to contribute to the growth of TiN thin films by reactive deposition from Ti, N 2 , and N precursors. The simulations are carried out at 1000 K, within the optimal range for TiN(001) epitaxial growth. We find Ti adatoms to be the highest-mobility species on TiN(001), with the primary migration path involving jumps of one nearest-neighbor distance d NN between adjacent fourfold hollow sites along in-plane 100 channels. Long jumps, 2d NN , are also observed, but at much lower frequency. N adatoms, which exhibit significantly lower migration rates than Ti, diffuse along in-plane 110 directions and, when they intersect other N atoms, associatively form N 2 molecules, which desorb at kinetic rates. As expected, TiN and TiN 3 complexes migrate at even lower rates with complex diffusion pathways involving rotations, translations, and rototranslations. TiN 2 trimers, however, are shown to have surprisingly high diffusion rates, above that of N adatoms and almost half that of Ti adatoms. TiN 3 motion is dominated by in-place rotation with negligible diffusion.

show abstract

Section: Introductionmentioning

confidence: 99%

Dynamics of Ti, N, and TiNx(x=1–3) admolecule transport on TiN(001) surfaces

et al. 2012

View full text Add to dashboard Cite

show abstract

“…In analogy to metallic glasses, 9 the formation of amorphous multicomponent transition metal nitrides should be based on alloying elements, where (1) the heat of mixing is strongly negative, hence in systems with strong tendency for compound formation, (2) there is a large difference (>10%) in atomic size, and (3) deep eutectic points exists.…”

Section: -7mentioning

confidence: 99%

Thermal stability and mechanical properties of amorphous coatings in the Ti-B-Si-Al-N system grown by cathodic arc evaporation from TiB2, Ti33Al67, and Ti85Si15 cathodes

Fager

Andersson²,

Jensen

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Ti-B-Si-Al-N coatings were grown on cemented carbide substrates in an industrial scale cathodic arc evaporation system using Ti 33 Al 67 , Ti 85 Si 15 , and TiB 2 cathodes in a reactive N 2 atmosphere. The microstructure of the as-deposited coatings changes from nanocrystalline to amorphous with addition of (B+Si+Al), or high amounts of (B+Si) to TiN. In the as-deposited state, the 4 µm-thick amorphous coatings are dense and homogenous, besides slight compositional modulation with Ti-rich layers induced by rotation of the substrate holder fixture during deposition, and have unusually few macroparticles. Annealing at temperatures ranging from 700• C to 1100• C results in that the coatings crystallize by clustering of TiN grains. The hardness of as-deposited amorphous coatings is 17-18 GPa, and increases to 21 GPa following annealing at 800• C. At annealing temperatures of 1000• C and above the hardness decreases due to inter-diffusion of Co from the substrate to the coating.

show abstract

“…NaCl-structure transition-metal (TM) nitride compounds and alloys are utilized in a wide range of applications based upon a unique set of properties including high hardness, 1,2 excellent scratch and abrasion resistance, 3 relatively low coefficient of friction, 4 high-temperature oxidation resistance, 5-7 electrical conductivity ranging from metallic to semiconducting, 8 optical absorption which can be tuned across the visible spectrum, 8 superconductivity, [9][10][11] and good diffusion barrier characteristics. [12][13][14][15] While these materials are known to be hard, they are also brittle with relatively poor toughness which can result in fracture under loading due to crack formation and propagation.…”

Section: Introductionmentioning

confidence: 99%

Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film

Fager

Howe

Greczyński

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Hf 1−x−y Al x Si y N (0 ≤ x ≤ 0.14, 0 ≤ y ≤ 0.12) single layer and multilayer films are grown on Si(001) at 250• C using ultra-high vacuum magnetically-unbalanced reactive magnetron sputtering from a single Hf 0.6 Al 0.2 Si 0.2 target in mixed 5%-N 2 /Ar atmospheres at a total pressure of 20 mTorr (2.67 Pa). The composition and nanostructure of Hf 1−x−y Al x Si y N films are controlled by varying the energy E i of the ions incident at the film growth surface while maintaining the ion-to-metal flux ratio constant at eight. Switching E i between 10 and 40 eV allows the growth of Hf 0.78 Al 0.10 Si 0.12 N/Hf 0.78 Al 0.14 Si 0.08 N multilayers with similar layer compositions, but in which the Si bonding state changes from predominantly Si-Si/Si-Hf for films grown with E i = 10 eV, to primarily Si-N with E i = 40 eV. Multilayer hardness values, which vary inversely with bilayer period Λ, range from 20 GPa with Λ = 20 nm to 27 GPa with Λ = 2 nm, while fracture toughness increases directly with Λ. Multilayers with Λ = 10 nm combine relatively high hardness, H ∼ 24 GPa, with good fracture toughness.

show abstract

Mechanical and tribological characterization of low-temperature deposited PVD TiN coatings

Cited by 50 publications

References 8 publications

Dynamics of Ti, N, and TiNx(x=1–3) admolecule transport on TiN(001) surfaces

Dynamics of Ti, N, and TiNx(x=1–3) admolecule transport on TiN(001) surfaces

Thermal stability and mechanical properties of amorphous coatings in the Ti-B-Si-Al-N system grown by cathodic arc evaporation from TiB2, Ti33Al67, and Ti85Si15 cathodes

Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film

Contact Info

Product

Resources

About