2014
DOI: 10.1016/j.actamat.2013.11.024
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Mechanical assessment of suspended ALD thin films by bulge and shaft-loading techniques

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Cited by 50 publications
(47 citation statements)
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“…The TiO2 fraction did not influence the residual stress of the nanolaminate (grown at 200 °C) as long as sublayers remained amorphous. Our results are in line with those of Berdova et al 49 for films grown at 220 °C (50% of TiO2, 4 nm bilayer thickness, residual stress ~450 MPa). And agree with the results of Behrendt et al 48 for ATO films grown at 100 °C (50% of TiO2, 2 nm bilayer thickness, residual stress ~400 MPa) where residual stress was reported to be independent of the film thickness.…”
Section: Residual Stresssupporting
confidence: 82%
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“…The TiO2 fraction did not influence the residual stress of the nanolaminate (grown at 200 °C) as long as sublayers remained amorphous. Our results are in line with those of Berdova et al 49 for films grown at 220 °C (50% of TiO2, 4 nm bilayer thickness, residual stress ~450 MPa). And agree with the results of Behrendt et al 48 for ATO films grown at 100 °C (50% of TiO2, 2 nm bilayer thickness, residual stress ~400 MPa) where residual stress was reported to be independent of the film thickness.…”
Section: Residual Stresssupporting
confidence: 82%
“…80 Our results are in line with literature for mixed oxide grown at 220 °C. 49 It is interesting also to compare our film stress results to earlier ATO nanolaminate film stress results. According to Maula et al 47 , the stress of TiO2 and Al2O3, grown at 285 °C on an unknown substrate, were 190 MPa (tensile) and -65 MPa (compressive).…”
Section: Residual Stressmentioning
confidence: 97%
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“…The solid unit cell simulations were performed using C3D10 10-node quadratic tetrahedral elements, and the hollow simulations used S3R 3-node shell elements to represent the discretized unit cells. An isotropic linear elastic material model was used for both solid and hollow structure simulations, and stiffnesses for the constituent polymer and Al 2 O 3 were obtained from literature [23,40]. Solid unit cell simulations had between 25,000 -250,000 elements and hollow unit cell simulations had between 25,000 -100,000 elements; the exact number of elements varied depending on the unit cell and structural parameters used.…”
Section: Finite Element Modelingmentioning
confidence: 99%