2013 14th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and 2013
DOI: 10.1109/eurosime.2013.6529978
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Mechanical behavior of flexible silicon devices curved in spherical configurations

Abstract: International audienceFoldable, stretchable and flexible electronics is of constant increasing interest since the early 2000's. Its applications spread from OLED-based displays, bio-inspired detectors and 'epidermal electronics'. Cylindrical curvature is largely studied through many 3 points and 4 points bending variations in electronic devices. However spherical curvature is poorly addressed, especially for monolithic approach. In this paper, a simulation and experiments of the elastic deformation of a thin s… Show more

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Cited by 18 publications
(21 citation statements)
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“…The experimental and 3D FEM simulations for UTCs with thicknesses of 15, 25, and 50 lm and an area of (10 Â 10) mm 2 indicate that the induced biaxial stresses are evenly present in the central area of the chip and they increase towards the edge. 117 These studies also indicate that even if the singlecrystal Si is anisotropic, its biaxial elastic modulus…”
Section: B Biaxial Bending Of Utcsmentioning
confidence: 86%
See 2 more Smart Citations
“…The experimental and 3D FEM simulations for UTCs with thicknesses of 15, 25, and 50 lm and an area of (10 Â 10) mm 2 indicate that the induced biaxial stresses are evenly present in the central area of the chip and they increase towards the edge. 117 These studies also indicate that even if the singlecrystal Si is anisotropic, its biaxial elastic modulus…”
Section: B Biaxial Bending Of Utcsmentioning
confidence: 86%
“…Biaxial flexural tests on plates, which have been used to evaluate the strength of ceramics for more than 40 years in various configurations such as ball-on-ring, 111,112 uniform pressure, 113 ring-on-ring, 114 or piston-on-threeballs, 115 have been adapted to investigate the biaxial strain effects in UTCs. 116,117,150 Properties such as phonon or electronic deformation potentials 118,119 are measured through these tests to find the fracture strength 96,[120][121][122] or to investigate the 2D strain effects on the electrical behavior of MOSFETs. 123,124 In the case of thin samples, the fracture strength is influenced by the roughness and morphology of the surface, 125 which in turn are affected by the surface defects introduced through backside grinding, polishing, chemical etching, and edge defects caused by wafer sawing or dicing.…”
Section: B Biaxial Bending Of Utcsmentioning
confidence: 99%
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“…<Rc<60mm), and then, tangential compressive stress zones appears at the edges of the die near the center of each of the four edges (Rc<60mm). This uniaxial compression field could be the origin of a buckling effect as shown in a previous study on cooled IR sensor [17,18] and due to a load-deflection response for thin-walled structures. While curving, these two behaviors are presented in figure 4a.…”
Section: Associated Mechanical Modelingmentioning
confidence: 55%
“…The research and development have been focusing on many different aspects, from the 3D printing of lightweight structure of astronomical mirrors [4] to freeform surfaces. The study of curved detectors also belongs to this framework [curved CCDs 1 and CMOS [5][6][7][8][9][10]. This technology has been gathering increasing attention as the fields of application are numerous, from low-cost commercial to high impact scientific systems, to mass-market and on board cameras [11], defense and security [12].…”
Section: Introductionmentioning
confidence: 99%