In this paper, a bulk acoustic resonator based on ZnO belts is demonstrated. This device shows a great deal of promise in applications as an electronic filter and as a mass sensor. The fabricated device was characterized using vector network analysis, and both the first and third harmonics of resonance were observed at approximately 247 and 754 MHz, respectively. A one-dimensional Krimholt−Leedom−Matthaei model was utilized to predict the resonant frequency of the device and confirm the observed behavior.Bulk acoustic resonators (BAR) have shown a great deal of promise for applications as high-performance frequency control devices in wireless networks such as cell phones, navigation systems, satellite communication, and other forms of data communication. These devices consist of a thin piezoelectric film sandwiched between two electrodes. An RF signal applied through the thickness of the film produces mechanical motion, and fundamental resonance occurs when the film thickness equals λ/2 the input signal. At the resonant frequency, the impedance of the device drops, whereas at anti-resonance, the impedance reaches a maximum. This behavior makes the resonator useful as an electronic filter. Subsystem miniaturization in filter applications is pushing toward on-chip components with low power consumption instead of the bulky off-chip quartz crystal and surface acoustic wave (SAW) devices currently being used. 1,2 The most promising candidates for replacement are the solidly mounted resonator (SMR), 3 thin-film bulk acoustic resonator (FBAR), 4 and clamped-clamped beam resonator (beam resonator). 5,6 In addition to applications in electronic circuits, BAR devices are immediately transferable as mass sensors. Saurbrey treated a change in mass applied to a resonator as a change in mass to the resonator itself. 7 Since the resonant frequency of a BAR device is defined by its material properties and geometry, applying a voltage, mass, or temperature change to the resonator results in a shift of its characteristic frequency. The ultimate sensitivity of the sensor is determined by the device's quality factor (Q) and modulus of elasticity. 8,9 For the purpose of this paper, only resonator application will be discussed.One challenge in manufacturing BAR devices is the achievement of a high-quality film. The piezoelectric materials currently being utilized are typically grown via sputter deposition. The results of this are low-quality films made up of oriented grains with a high concentration of defects. 10 ZnO is particularly sensitive to temperature, acids, bases, and even water. As a result, other processes like cleaning, etching, metal layer patterning, passivation, reactive ion etching, and the stripping of photoresist all degrade the quality of the ZnO. 11 High-quality single crystals are desirable; however, microfabrication techniques result in poor material properties.The bottom-up approach of nanotechnology has yielded many high-quality, single-crystal, and defect-free structures such as nanobelts. 12 Piezoele...