Mechanical characterization of chemical-vapor-deposited polycrystalline 3C silicon carbide thin films

Nagappa, S.; Zupan, Marc; Zorman, Christian A.

doi:10.1016/j.scriptamat.2008.07.010

Cited by 18 publications

(6 citation statements)

References 14 publications

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“…In this work, C/C composites and SiC coating are used as substrate and CVD coating and specific analyses are performed in the coating/substrate system to verify the present analytical model. The Young's moduli and Poisson's ratios are before listed in Table . And the variations of average linear thermal expansion coefficients α SiC and α C/C of SiC and C/C with temperature were measured by a thermal dilatometer (PCY‐II), and shown in Figure .…”

Section: Resultsmentioning

confidence: 99%

“…The Young's moduli and Poisson's ratios are before listed in Table 1. [15][16][17][18] And the variations of average linear thermal expansion coefficients a SiC and a C/C of SiC and C/C with temperature were measured by a thermal dilatometer (PCY-II), and shown in Figure 4. It can be seen the both thermal expansion coefficients increase with the temperature, but the difference between them remains nearly constant once the temperature is above 900°C.…”

Section: Resultsmentioning

confidence: 99%

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Residual thermal stresses prediction for CVD coating/substrate system based on a numerical model

Wang

Chen

Pan

et al. 2018

Int J Applied Ceramic Tech

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For a chemical vapor deposition (CVD) coating/substrate system, an improved and optimized numerical model is established to predict the residual thermal stresses. This model takes into account both the normal and bending strains and is developed based on the concept of a misfit strain between coating and substrate. Comparisons are presented between predictions from this model and from finite element analysis. The effects of coating thickness, elastic modulus, temperature difference, and multiple deposition on the residual stresses in the coating/substrate system have also been analyzed in detail. Furthermore, some confirmatory CVD SiC experiments with different layers have also been conducted according to the analysis model. The predictions that the multiple deposition system can relieve the residual thermal stresses and reduce the microcracks in the outermost coating effectively, are consistent with the numerical model.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Residual thermal stresses prediction for CVD coating/substrate system based on a numerical model

Wang

Chen

Pan

et al. 2018

Int J Applied Ceramic Tech

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“…Therefore, the elastoplastic constitutive model of 3C-SiC was parameterized based on existing experimental data. Specifically, the density of 3C-SiC substrate is set to 3200kg/m³ and Poisson's ratio is set to 0.168 [41]. Young's modulus and yield stress used herein are obtained by performing MD simulations, as shown in Figure S-2.…”

Section: Indentationmentioning

confidence: 99%

Peridynamic simulations of damage in indentation and scratching of 3C-SiC

Zhu

2022

Journal of Materials Research

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The cubic silicon carbide (3C-SiC) has broad application prospects in many fields due to its excellent material properties. The modeling of damage in 3C-SiC due to contact loads is important yet challenging. In this paper, simulations based on ordinary state-based peridynamics (PD) theory are proposed to model the damage of 3C-SiC in indentation and scratching. The constitutive parameters of 3C-SiC for PD simulation are obtained by performing MD simulations of nanoindentation. It is found that in the indentation simulations the initiation and propagation of cracks are observed, which shows that the PD can model the crack formation and propagation in the indentation process of brittle solid materials. During the scratching process, the variation of friction force is consistent with that of material wear. It is also found that the specific cutting energy increases nonlinearly with the decrease of scratching depth due to size effect. In addition, for the scratching with double indenters, the volume of material removal is more than twice that of scratching with an indenter due to the coupling effect of the two indenters under certain conditions. This paper demonstrates that PD is a powerful tool to investigate the indentation and scratching process of brittle solid materials.

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“…Silicon carbide (SiC) has been, and continues to be the focus of much attention because of its many attractive physical and mechanical properties. Its low density, good oxidation resistance, and high strength at elevated temperatures make it attractive for a variety of electrical and optical applications . These include, for example, high power, high‐frequency devices, sensor and actuator MEM devices, blue light‐emitting diodes, and amorphous coatings in solar cells …”

Section: Introductionmentioning

confidence: 99%

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

et al. 2014

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Nanometric silicon carbide (SiC) powder (~5 nm) with a stacking-sequence disordered structure (SD-SiC), synthesized from elemental powders of Si and C, was investigated by microscopic and several spectroscopic methods. The structure of SD-SiC was characterized by transmission electron microscopy (TEM), 13 C, and 29 Si-NMR, and by infrared (IR), Raman, and X-ray photoelectron spectroscopy (XPS) methods. TEM characterizations showed relatively large deviations of the lattice parameters in the as-synthesized SiC, indicative of the presence of stacking-sequence disorder. IR analysis showed a weaker Si-C bond in the SD-SiC than in the 3C-SiC. XPS determinations showed that C and Si in SD-SiC are similar to those in 3C-SiC. Broader peaks of 29 Si and 13 C MAS-NMR also indicate that the structure of SD-SiC is different from that of 3C-SiC. Raman spectroscopy exhibited activities for the crystalline polytypes and the amorphous of SiC but lack of them for the SD-SiC. The inactivity of Raman spectroscopy for the SD-SiC along with large deviation of the lattice constant and the extremely broad X-ray diffraction peaks would indicate that SD-SiC is a possible intermediate state between conventional polytype SiC and amorphous SiC, that is, a possible new type of SiC.

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Mechanical characterization of chemical-vapor-deposited polycrystalline 3C silicon carbide thin films

Cited by 18 publications

References 14 publications

Residual thermal stresses prediction for CVD coating/substrate system based on a numerical model

Residual thermal stresses prediction for CVD coating/substrate system based on a numerical model

Peridynamic simulations of damage in indentation and scratching of 3C-SiC

Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC

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