Mechanical characterization of low-K dielectric materials

Moore, Terrence J.; Hartfield, Cheryl; Anthony, J. Mark; Ahlburn, B. T.; Ho, Paul S.; Miller, Marisa E.

doi:10.1063/1.1354437

Cited by 13 publications

(4 citation statements)

References 4 publications

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“…The advantages of this method are numerous compared to other techniques [5]: a simple and fast sample preparation, local loading, direct observation of the crack path and application to pattern structures are the main benefits. …”

Section: Metal Peel Offmentioning

confidence: 98%

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Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

Gallois-Garreignot

Chave

Gonchond

et al. 2009

2009 11th Electronics Packaging Technology Conference

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The feature size reduction on IC chips following Moore's law leads to great integration challenge. Among others, the mechanical integrity of pad structures is particularly critical. However, to find suitable containment actions remain tricky, and a better knowledge and characterization of interfaces are then mandatory to face these problems. The Cross-Sectional Nanoindentation (CSN) is a novel method of mechanical characterization, developed by Sanchez et al. [1]. With such method, various interfaces can be characterized, at the micrometer level, in terms of adhesion energy. Its advantages compared to the well-known 4pt bending technique are numerous: a simple and fast sample preparation, direct observation of the crack path, etc.In this paper, the CSN technique is applied to discriminate and characterize the interfaces which compose a typical wire bond pad structure. More precisely, Inter-Metal Dielectric/Metal stacks, describing a pad level are tested by the mean of CSN. The exact failed interface is then determined by SEM views.However, in order to compare the interface to each others, the adhesion energies need to be known. Due to the plastic deformation of the metal during the test, Finite Element Method (F.E.M.) is required. A 2D axisymmetric model, described in [2], is used to reproduce the test. Each stack with their characteristics is simulated and an energetic quantity is calculated. Based on these values, the interfaces are finally ranked according to their mechanical reliability. Additional insights and novel findings from the state of the art are also discussed concerning both experimental and numerical aspects of the method.At last, the ability to discriminate pad structures straightforwardly by CSN is also studied. Crack behavior is investigated by S.E.M. views and a discussion is proposed concerning the most relevant criterion. Future developments concerning this method are finally described.

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Section: Metal Peel Offmentioning

confidence: 98%

“…In microelectronic industry, the 4-Point Bending (4PB) technique [5] is widely used for thin films adhesion measurements. However, the sample preparation is time-consuming and strongly impacts the measurement efficiency.…”

Section: I-introductionmentioning

confidence: 99%

Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

Gallois-Garreignot

Chave

Gonchond

et al. 2009

2009 11th Electronics Packaging Technology Conference

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“…Potential substrates with low density and Young's modulus-leading to a large acoustic impedance mismatch with CoFeB-include polymers, silsesquioxanes, or nanoporous organosilicate glasses that have been used as ultralow-permittivity dielectrics in microelectronic applications and can be cointegrated with CoFeB waveguides in potential experimental realizations. Such materials can have densities down to 1 g/cm 3 and Young's moduli of less than 1 GPa [76,77], which can lead to acoustic reflection coefficients of R = [(1 − Z CoFeB /Z sub )/ (1 + Z CoFeB /Z sub )] 2 > 0.9. Alternatively, experimental realizations of free boundary conditions could be based on suspended waveguides.…”

Section: B Linear Magnetoelastic Waves In Thin Waveguidesmentioning

confidence: 99%

Confined magnetoelastic waves in thin waveguides

et al. 2021

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The characteristics of confined magnetoelastic waves in nanoscale ferromagnetic magnetostrictive waveguides have been investigated by a combination of analytical and numerical calculations. The presence of both magnetostriction and inverse magnetostriction leads to the coupling between confined spin waves and elastic Lamb waves. Numerical simulations of the coupled system have been used to extract the dispersion relations of the magnetoelastic waves as well as their mode profiles.

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“…Adhesion is a critical parameter as most low-k materials require interfacial engineering before good adhesion is realized. For adhesion testing, the semiconductor industry has to a large degree adopted DCB and four-point bend tests [96] for testing blanket film stacks.…”

Section: A Adhesion Requirements For Assemblymentioning

confidence: 99%

Interface Reliability Assessments for Copper/Low-k Products

Hartfield

Ogawa

Park

et al. 2004

IEEE Trans. Device Mater. Relib.

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Multiple new materials are being adopted by the semiconductor industry at a rapid rate for both semiconductor devices and packages. These advances are driving significant investigation into the impact of these materials on device and package reliability. Active investigation is focused on the impact of back-end-of-line (BEOL) processing on Cu/low-k reliability. This paper discusses Cu/low-k BEOL interfacial reliability issues and relates key items from the assembly process and packaging viewpoint that should be managed in order to prevent adverse assembly impact on BEOL interfacial reliability. Reliability failure mechanisms discussed include interface diffusion-controlled events such as the well-known example of Cu electromigration (EM), as well as stress-migration voiding. Interface defectivity impact on dielectric breakdown and leakage is discussed. Lastly, assessments of assembly impact on these Cu/low-k interfacial concerns are highlighted.

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Mechanical characterization of low-K dielectric materials

Cited by 13 publications

References 4 publications

Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

Thin films interfacial adhesion characterization by Cross-Sectional Nanoindentation: Application to pad structures

Confined magnetoelastic waves in thin waveguides

Interface Reliability Assessments for Copper/Low-k Products

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