2016
DOI: 10.1016/j.orgel.2016.05.016
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Mechanical integrity of hybrid indium-free electrodes for flexible devices

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Cited by 11 publications
(12 citation statements)
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“…In this comparison, we have also included the case of a zinc tin oxide (ZTO) combined with metal grids embedded on a polymer matrix. [156] ZTO is an amorphous TCO, with sufficient conductivity to be utilized in combination with metal grids as the anode in large-area flexible OLEDs. In fact, it was demonstrated that with the same type of metal grids, ZTO devices performed better than the reference ITO OLEDs.…”
Section: Transparent Electrodes As Front Electrodes In Oledsmentioning
confidence: 99%
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“…In this comparison, we have also included the case of a zinc tin oxide (ZTO) combined with metal grids embedded on a polymer matrix. [156] ZTO is an amorphous TCO, with sufficient conductivity to be utilized in combination with metal grids as the anode in large-area flexible OLEDs. In fact, it was demonstrated that with the same type of metal grids, ZTO devices performed better than the reference ITO OLEDs.…”
Section: Transparent Electrodes As Front Electrodes In Oledsmentioning
confidence: 99%
“…For such applications, hybrid electrodes based on ZTO and metal grids may offer a better alternative. [156] However, in rigid top-emitting LEDs, ZnO:B, when grown by LPCVD, has the additional advantage of an intrinsic pyramidal surface texture with known light scattering properties, [137] improving light out coupling. [158] TCO/metal/TCO stacks and Ag NWs are on par in our FOM comparison.…”
Section: Transparent Electrodes As Front Electrodes In Oledsmentioning
confidence: 99%
“…This was attributed to the polycrystalline nature of AZO, where a high density of grain boundaries was claimed to function as crack initiators, in contrast to the amorphous ZTO without grain boundaries. 194 A low sheet resistance of 8.8 U sq À1 and a transmittance of 82% in the visible region have been achieved with a stack of ZTO (20 nm)/Ag (8 nm)/ZTO (39 nm), resulting in a Haacke gure of merit about an order of magnitude better than that of ITO. In this comparison, the ITO layer (thickness: 60 nm) had been prepared under identical temperature conditions to those of the ZTO/Ag/ZTO, i.e.…”
Section: Metal-oxide/metal/metal-oxide Sandwich Electrodesmentioning
confidence: 99%
“… 12 Furthermore, this microstructure remains stable up to temperatures as high as 550 °C. 11 , 13 Because of these properties, ZTO has already been applied as a transparent contact in organic light-emitting diodes, 12 , 14 as a channel in thin film transistors, 15 , 16 and as a recombination layer in silicon-perovskite tandem solar cells. 17 Theoretical and experimental evidence suggests that the presence of oxygen deficiencies in ZTO creates both shallow and deep sub-gap states, with the latter acting as absorption centers in the visible part of the spectrum.…”
Section: Introductionmentioning
confidence: 96%