“…12,12 5,60 0,32915 (Lipp & Schvetz , 1975) Due to the strongly extended lattice during the incorporation of Al and Si into the C-C-C axis, the phases B 12 C 2 A1, B 48 C 2 Al 3 and B 12 C 2 Si have a microhardness (HV1 = 25 -30.5 GPa) even lower that that of pure boron carbide (Table 2). A novel superhard phase c-BC 2 N was synthesized using the laser-heated diamond anvil cell with a hardness Hv=76 GPa [Solozhenko, 2001] (Tabl.2). The hardness (50-77GPa) of the new ternary borides is much higher than that of "pure" boron carbide sintered by hot pressing (Tabl.2).…”