Mechanical properties of thin ceramic coatings of the SiCN system deposited by reactive ion-plasma sputtering

Synthesis of Si–C–N coatings by thermal Plasmajet chemical vapour deposition applying liquid precursors

“…Reactive physical vapour deposition (PVD) processes use silicon targets and a carburizing reactive gas like methane or acetylene. 1 In the various CVD processes, vaporized liquids, like hexamethyldisilane ((CH 3 ) 3 Si 2 (CH 3 ) 3 ), tetrachlorosilane (SiCl 4 ) or naturally gaseous precursors like silane (SiH 4 ), in combination with a carbon precursor are applied. The most common silicon sources, SiH 4 and SiCl 4 , are quite hazardous.…”

“…Even at these low substrate temperatures, interface damage occurs in highspeed steel substrates due to the Kirkendall effect. 1 A photochemical CVD process using Si 2 H 6 and CCl 4 as precursors is known to produce very thin coatings with outstanding quality with regard to lattice defects and low interface damage, as, in contrast to PECVD processes, there is no ion bombardment. Deposition rates of 20 nm h À1 can be achieved.…”

Structural characterization of amorphous SiCxNy chemical vapor deposited coatings

“…24 Nonhydrogenated deposits with continuous composition between SiN 1.38 and SiC 0.85 were prepared from TMS-NH 3 -H 2 , either by chemical vapor deposition ͑CVD͒ at 1200°C 25 or by PACVD at 600°C. 26 Several papers concerning the microstructure of ultrafine particles 7,8,10,[13][14][15] or deposits, 16,17,19,21,22,25,26 suggest that promising features of ''SiCN'' would be due to more complicated Si, C, and N atomic chemical environments than in a mixture of pure Si 3 N 4 -SiC phases. The objective of the present work was to investigate the chemical bonding and the local order around the different atoms of thick amorphous SiC x N y deposits (0.03 р x/(x ϩ y) р 0.67) prepared by CVD at 1000-1200°C using TMS-NH 3 -H 2 .…”

“…14,15 In comparison ''SiCN'' coatings have been less studied. Deposition of amorphous and hydrogenated films was made from laser vapor phase reaction of hexamethyldisilazane ͑HMDS͒ with ammonia, 16 by plasma polymerization of HMDS in an electric discharge, 17 by reactive (N 2 ) magnetron sputtering 18 or ion-plasma sputtering 19 of a SiC target, by plasma-assisted chemical vapor deposition ͑PACVD͒ using SiH 4 -NH 3 -C 2 H 4 ͑or CH 4 ͒-H 2 20-22 or ͓(CH 3 ͒ 2 N͔ 3 SiN 3 ͑Ref. 23͒ and by laser ablation of a SiC target in a nitrogen atmosphere.…”

Structural and mechanical properties of amorphous silicon carbonitride films prepared by vapor-transport chemical vapor deposition

“…As an illustration, amorphous and hydrogenated SiCN films were grown by ion-plasma sputtering of a SiC target [13]. Plasma-assisted chemical Surface & Coatings Technology 204 (2009) …”