Mechanical reliability of transparent conducting IZTO film electrodes for flexible panel displays

Kim, Young Sung; Hwang, Woo-Jin; Eun, Kyoungtae; Choa, Sung‐Hoon

doi:10.1016/j.apsusc.2011.04.123

Cited by 33 publications

(15 citation statements)

References 15 publications

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“…Furthermore, when the radius of curvature and the mechanical stress increase beyond tolerance, cracks in the substrate emerge and TFTs will fail. Hence, it is necessary for researchers to comprehend the impact of mechanical stress on flexible device performance [173][174][175][176][177][178][179][180][181][182][183]. In fact, with the widely extending use of flexible applications, bending behaviors of the TFTs will become more and more complex.…”

Section: Flexible Tfts Under Mechanical Stressmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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Oxide semiconductors have drawn much attention in recent years due to their outstanding electrical performance, such as relatively high carrier mobility, good uniformity, low process temperature, optical transparency, low cost and especially flexibility. Flexible oxide-based thin film transistors (TFTs) are one of the hottest research topics for next-generation displays, radiofrequency identification (RFID) tags, sensors, and integrated circuits in the wearable field. The carrier transport mechanism of oxide semiconductor materials and typical device configurations of TFTs are firstly described in this invited review. Then, we describe the research progress on flexible oxide-based TFTs, including representative TFTs fabricated on different kinds of flexible substrates, the mechanical stress effect on TFTs and optimized methods to reduce this effect. Finally, an outlook for the future development of oxide-based TFTs is given.

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Section: Flexible Tfts Under Mechanical Stressmentioning

confidence: 99%

Research Progress on Flexible Oxide-Based Thin Film Transistors

Zhang

Xiao

et al. 2019

Applied Sciences

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“…For prolonged use of such devices, long-term failure mechanisms related to electrical characteristics of conductive layers of flexible organic optoelectronics should be considered. Although investigations on electrical conductivity of ITO thin films under bending have been conducted in previous studies, the change of electrical conductivity is mostly assessed after cyclic bending [12,[15][16][17]20,22,31,42,[48][49][50][51] or static bending [40]. However, it is necessary to study the concurrent change of electrical conductivity of ITO thin film under long-term mechanical bending, and its correlation with the mechanical failure mechanism.…”

Section: Introductionmentioning

confidence: 99%

Conductive Characteristics of Indium Tin Oxide Thin Film on Polymeric Substrate under Long-Term Static Deformation

Tran

Lin

2018

Coatings

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The objective of this study is to investigate the effect of long-term static bending on the conductive characteristics of indium tin oxide (ITO) thin film in flexible optoelectronics. Two types of substrate are considered, namely ITO on polyethylene naphthalate (ITO/PEN) and ITO on polyethylene terephthalate (ITO/PET). Electrical properties of the ITO/PEN and ITO/PET sheets are measured in situ under static bending at various radii of curvature. Experimental results indicate that no significant change in electrical resistance of the ITO/PEN and ITO/PET sheets is found for compressive bending after 1000 h at a curvature radius of 10 mm or larger. However, the ITO/PEN and ITO/PET sheets are seriously damaged under a tensile bending of 10 mm radius and 5 mm radius, respectively. The given ITO/PET sheet exhibits a greater resistance to long-term mechanical bending than the ITO/PEN one, which is attributed to the effect of stiffness and thickness of substrate. As the given PET substrate has a lower stiffness and thickness than the PEN one, ITO thin film in the ITO/PET sheet has a smaller stress given a bending radius. Consequently, a smaller extent of change in the electrical conductance of ITO thin film is found in the ITO/PET sheet.

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“…flexible optoelectronics. [8][9][10][11] a-IZTO could also exhibit much reduced surface roughness and higher thermal stability than a-ITO, since the transition from amorphous to crystalline has been demonstrated to occur at higher temperature. [7,12] In addition, it has been shown that IZTO exhibits higher work function than ITO, which can be important in minimizing band alignment mismatching in some applications.…”

Section: Introductionmentioning

confidence: 99%