Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition Temperature

Hezel, Rudolf; Hearn, E. W.

doi:10.1149/1.2131309

Cited by 26 publications

(7 citation statements)

References 7 publications

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“…This confirms earlier results obtained by us (12,15). For the decrease of QN/q with deposition and annealing temperature, a correlation with the decomposition of Si-H and N-H bonds was found (3,11).…”

Section: Resultssupporting

confidence: 92%

“…Whereas for APCVD Si nitride a correlation between the charges and hydrogen bonding in the films was suggested (3,11), the data presented in Fig. 3a for plasma nitride do not clearly indicate such a correlation.…”

Section: Mnos Structures 1681mentioning

confidence: 85%

“…The performance of these metal-nitride-oxide-silicon (MNOS) devices is strongly dependent on the density of fast interface states and fixed insulator charges (1)(2)(3).…”

mentioning

confidence: 99%

“…Pyrolytic chemical vapor deposited (CVD) silicon nitride films are widely used as active layers in microelectronics, e.g., as gate dielectric in nonvolatile memory elements. The performance of these metal-nitride-oxide-silicon (MNOS) devices is strongly dependent on the density of fast interface states and fixed insulator charges (1)(2)(3).…”

mentioning

confidence: 99%

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Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride

Hezel

Blumenstock

Schörner

1984

J. Electrochem. Soc.

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The net positive charge density QN/q and the interface state density D~T of MNOS structures on p-Si (100) with APCVD and plasma silicon nitride is studied as a function of the nitride deposition temperature and the postdeposition annealing temperature. For APCVD silicon nitride, a decrease of QN/q is accompanied by an increase of D~T with increasing deposition an d annealing temperature. Electron irradiation (30 keV and 5 • 10 -5 C/cm 2 dosage) did not affect QN/q, whereas D~T was increased for nitride films deposited below 800~ For plasma silicon nitride, both QN/q and D~T decreased with deposition and annealing temperature up to 450~ Very low interface state densities (8 • 109 cm -2 eV -~) could be achieved. These low D~T values are due to the influence of hydrogen incorporated in the PECVD silicon nitride films. Very high positive charge densities (>1013 cm -2) could be obtained by cesium contamination of the plasma nitride films.Pyrolytic chemical vapor deposited (CVD) silicon nitride films are widely used as active layers in microelectronics, e.g., as gate dielectric in nonvolatile memory elements. The performance of these metal-nitride-oxide-silicon (MNOS) devices is strongly dependent on the density of fast interface states and fixed insulator charges (1-3).Plasma enhanced CVD (PECVD) silicon nitride films are almost exclusively applied for final passivation of semiconductor devices. There is, however, growing interest in using plasma Si nitride as an electrically active layer. It appears to be promising as dielectric for high efficiency silicon inversion layer solar cells (4, 5), as well as for amorphous silicon thin film transistors for application as switching elements in large area displays and imaging arrays (6, 7). In both cases, the properties of the plasma Si nitride/silicon interface, such as the fixed nitride charges and the fast interface states, are of great importance. However, no data about these quantities are available in the literature up to now. For the case of inversion layer solar cells, a high density of fixed positive insulator charges in conjunction with a low interface state density is required in order to obtain a highly conductive inversion layer (8,9). In contrast to MOS devices, where a correlation between the fixed oxide charges and the interface states was found (10), for MNOS structures with atmospheric pressure CVD (APCVD) Si nitride, some data pointing to an inverse behavior were already reported by us (11,12).In the present work the grown-in fixed charges (density QJq) and the fast surface states (density D*~T at midgap) have been investigated as a function of the nitride deposition temperature and after postdeposition heat-treatment in nitrogen.The studies were performed on A1/Si nitride/thin Si oxide/p-Si (100) structures with APCVD as well as with PECVD Si nitride; the different behavior of these dielectric films will be outlined. Particularly for the case of plasma Si nitride on silicon, where very low interface state densities could be achieved, the crucial role of hy...

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Section: Resultssupporting

confidence: 92%

Section: Mnos Structures 1681mentioning

confidence: 85%

“…The performance of these metal-nitride-oxide-silicon (MNOS) devices is strongly dependent on the density of fast interface states and fixed insulator charges (1)(2)(3).…”

mentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride

Hezel

Blumenstock

Schörner

1984

J. Electrochem. Soc.

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“…8. Referring to a relative dielectric constant of CVD SiaN4 films (24) (5.8 • 0.1 at 1 MHz), the nitrided SiO2 film seems to have dielectric properties similar to those of Si3N4. In the case of the 500A thick film shown in Fig.…”

Section: Infrared Transmittance Spectroscopymfigure 4 Showsmentioning

confidence: 99%

Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

Ito

Nozaki

Ishikawa

1980

J. Electrochem. Soc.

121

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It has been found that SiO2 can be converted directly to silicon nitride or oxynitride at the surface of SiO2 films by heating oxidized silicon wafers in anhydrous ammonia gas. At temperatures above 9O0~ nitrided SiO2 films have graded composites with respect to their nitrogen fraction. This analysis was performed by AES, infrared transmittance spectroscopy, and etch-rate profiles. Nitrided surface regions on SiO2 films, in which the nitride fraction ranged from 10% to 50%, showed remarkable masking effects against subsequent oxidation at high temperatures. * Electrochemical Society Active Member.

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Silicon Nitride and Aluminum Oxide—Multifunctional Dielectric Layers Crucial for the Progress of Silicon Solar Cells

Hezel

Jaeger-Hezel

2019

Springer Series in Optical Sciences

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Mechanical Stress and Electrical Properties of MNOS Devices as a Function of the Nitride Deposition Temperature

Cited by 26 publications

References 7 publications

Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride

Interface States and Fixed Charges in MNOS Structures with APCVD and Plasma Silicon Nitride

Direct Thermal Nitridation of Silicon Dioxide Films in Anhydrous Ammonia Gas

Silicon Nitride and Aluminum Oxide—Multifunctional Dielectric Layers Crucial for the Progress of Silicon Solar Cells

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