Mechanical stress in ALD-Al2O3 films

Krautheim, G.; Hecht, T.; Jakschik, S.; Schröder, Uwe; Zahn, W.

doi:10.1016/j.apsusc.2005.01.118

Cited by 69 publications

(35 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Box 513, 5600 MB Eindhoven, The Netherlands; electronic mail: m.aghaee@tue.nl substrate during cooling, responsible for the appearance of cracks in the film. [22][23][24] Several single layers and multilayer stacks of TiO 2 , Al 2 O 3 , and ZnO prepared by thermal and plasma-assisted ALD on polymer substrates have been used for encapsulation and moisture barrier purpose. [25][26][27] Among these oxides, titanium dioxide is a promising material with good stability against degradation.…”

Section: Introductionmentioning

confidence: 99%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Titanium dioxide films were grown by atomic layer deposition (ALD) using titanium tetraisopropoxide as a titanium precursor and water, ozone, or oxygen plasma as coreactants. Low temperatures (80-120 C) were used to grow moisture barrier TiO 2 films on polyethylene naphthalate. The maximum growth per cycle for water, ozone, and oxygen plasma processes were 0.33, 0.12, and 0.56 Å /cycle, respectively. X-ray photoelectron spectrometry was used to evaluate the chemical composition of the layers and the origin of the carbon contamination was studied by deconvoluting carbon C1s peaks. In plasma-assisted ALD, the film properties were dependent on the energy dose supplied by the plasma. TiO 2 films were also successfully deposited by using a spatial ALD (SALD) system based on the results from the temporal ALD. Similar properties were measured compared to the temporal ALD deposited TiO 2 , but the deposition time could be reduced using SALD. The TiO 2 films deposited by plasma-assisted ALD showed better moisture barrier properties than the layers deposited by thermal processes. Water vapor transmission rate values lower than 5 Â 10 À4 g day À1 m À2 (38 C and 90% RH) was measured for 20 nm of TiO 2 film deposited by plasma-assisted ALD.

show abstract

Section: Introductionmentioning

confidence: 99%

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Aghaee

Maydannik

Johansson

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

show abstract

“…It was also reported that electron beam causes amorphous ALD-Al 2 O 3 film ($20 nm) to crystallise [2]. Heat treatment or thermal cycling to 780-790 C also caused crystallisation of amorphous ALD-Al 2 O 3 film (25-60 nm) into different phases (, , , , , ) [6,7,12]. Furthermore, the experimental results showed that the partially transformed crystalline film has even higher dielectric constant than the amorphous film.…”

Section: Introductionmentioning

confidence: 64%

“…ALD-Al 2 O 3 film has especially attracted a great deal of attentions due to its high-dielectric constant (9 for Al 2 O 3 versus 3.9 for SiO 2 , both in amorphous state) [6][7][8][9] and high-thermal conductivity [9,10]. It is believed that Al 2 O 3 is the most chemically and thermodynamically stable insulator of all the pure metal oxides [7,9,11].…”

Section: Introductionmentioning

confidence: 99%

Growth of aligned carbon nanotubes on ALD-Al₂O₃coated silicon and quartz substrates

Wang

Cai

Chen

et al. 2011

Journal of Experimental Nanoscience

View full text Add to dashboard Cite

The smooth surface of the amorphous Al 2 O 3 film on either silicon or quartz, coated by atomic layer deposition (ALD), was changed to rough surface by annealing in either air or hydrogen at high temperature (745 C) due to the formation of nanosized pinholes and micrometre pimples during the crystallisation of the amorphous Al 2 O 3 . The rough surface makes the growth of long carbon nanotubes (CNTs) by chemical vapour deposition impossible. Nevertheless, we were able to develop new catalyst recipes for successful growth of vertically aligned CNTs on ALD-Al 2 O 3 coated silicon and quartz substrates. The lengths of the CNTs reached 90 mm on silicon substrates and 180 mm on quartz substrates. Furthermore, it is observed that the adhesion of CNTs on silicon substrates is much stronger than that on quartz substrates.

show abstract

“…[131] Annealing temperatures were kept well below 800˚C, the transition temperature at which sharp increases in film stress were observed for t film > 60 nm, attributed to phase transitions from the amorphous to the polycrystalline state. [130] Katamreddy demonstrated that annealing ALD alumina films at 600ºC did not significantly change the amorphous properties of the film. [132] The amorphous structure of these Al 2 O 3 membranes after The hexagonal nanocrystallites labeled i,ii,iii are not oriented with the zone axis and thus crystal periodicity is not observed.…”

Section: Sio 2 Nanopore Fabricationmentioning

confidence: 99%

“…[130] Thermal annealing at 500˚C (30 minutes) was performed to help relax residual tensile film stress and to improve characteristic film strength. [131] Annealing temperatures were kept well below 800˚C, the transition temperature at which sharp increases in film stress were observed for t film > 60 nm, attributed to phase transitions from the amorphous to the polycrystalline state.…”

Section: Sio 2 Nanopore Fabricationmentioning

confidence: 99%

Solid-State Nanopore Sensors for Nucleic Acid Analysis

Venkatesan

Bashir

2011

Nanopores

View full text Add to dashboard Cite

Nanopore DNA analysis is an emerging technique that involves electrophoretically driving DNA molecules through a nano-scale pore in solution and monitoring the corresponding change in ionic pore current. This versatile approach permits the label-free, amplification-free analysis of charged polymers (single stranded DNA, double stranded DNA and RNA) ranging in length from single nucleotides to kilobase long genomic DNA fragments with subnanometer resolution.Recent advances in nanopores suggest that this low-cost, highly scalable technology could lend itself to the development of third generation DNA sequencing technologies, promising rapid and reliable sequencing of the human diploid genome for under $1000.Here, we report the development of versatile, nano-manufactured Al 2 O 3 solid-state nanopores and nanopore arrays for rapid, label-free, single-molecule detection and analysis of DNA and protein. This nano-scale technology has proven to be reliable, affordable, and mass producible, and allows for integration with VLSI processes. A detailed characterization of nanopore performance in terms of electrical noise, mechanical robustness and materials analysis is provided, and the functionality of this technology in experimental DNA biophysics is explored.A framework for the application of this technology to medical diagnostics and sequencing is also presented. Specifically, studies involved the detection of DNA-protein complexes, a viable strategy in screening methylation patterns in panels of genes for early cancer detection, and the creation of lipid bilayer coated nanopore sensors, useful in creating hybrid biological/solid-state nanopores for DNA sequencing applications.The concept of a gated nanopore is also presented with preliminary results. The fabrication of this novel system has been enabled by the recent discovery of graphene, a highly versatile material with remarkable electrical and mechanical properties. Direct modulation of the nanopore conductance was observed through the application of potentials to the graphene gate.These exciting results suggest this technology could potentially be useful in slowing down or trapping a DNA molecule in the pore, thereby enabling solid-state nanopore sequencing.iii

show abstract

Mechanical stress in ALD-Al2O3 films

Cited by 69 publications

References 3 publications

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Growth of aligned carbon nanotubes on ALD-Al₂O₃coated silicon and quartz substrates

Solid-State Nanopore Sensors for Nucleic Acid Analysis

Contact Info

Product

Resources

About

Mechanical stress in ALD-Al2O3 films

Cited by 69 publications

References 3 publications

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Low temperature temporal and spatial atomic layer deposition of TiO2 films

Growth of aligned carbon nanotubes on ALD-Al2O3coated silicon and quartz substrates

Solid-State Nanopore Sensors for Nucleic Acid Analysis

Contact Info

Product

Resources

About

Growth of aligned carbon nanotubes on ALD-Al₂O₃coated silicon and quartz substrates