2011
DOI: 10.1016/j.jcrysgro.2010.10.141
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Mechanism and applications of local droplet etching

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Cited by 17 publications
(6 citation statements)
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“…Higher temperatures result in more significant etching. This is in agreement with experimental observations 28,33 . As the droplet etches into the substrate liquid Ga atoms displace substrate As atoms, which subsequently attach near the triple junction.…”
Section: Simulationssupporting
confidence: 94%
“…Higher temperatures result in more significant etching. This is in agreement with experimental observations 28,33 . As the droplet etches into the substrate liquid Ga atoms displace substrate As atoms, which subsequently attach near the triple junction.…”
Section: Simulationssupporting
confidence: 94%
“…2(a)], confirming the presence of carbon in the sample. 25 The average full-width at half maximum of Peak 1 to Peak 3 (from 2 to 21 K) is 10 meV, which is comparable to or lower than the best values reported in the literature for GaAs/Al x Ga 1−x As QDs, [26][27][28] indicating highly uniform dots. The high uniformity is demonstrated by the AFM image of surface dots shown in Fig.…”
supporting
confidence: 64%
“…Top-down and bottom-up methods are two approaches used to produce GaAs nanostructures by a variety of physical [7, 8], chemical [9], and electrochemical etching techniques [10]. GaAs nanostructures can be obtained in different forms and shapes including quantum wells [11], nanowires [12], quantum dots (QDs) [13], quantum dot molecules [14], quantum rings (QRs) [15], nanodiscs [16], coupled ring/disks [17], nanopillars [18], nanoholes [19], and nanopores [20]. Electrochemically formed porous GaAs nanostructures are particularly attractive for many applications due to their unique nanoscale properties and high surface-to-volume ratio.…”
Section: Introductionmentioning
confidence: 99%