Mechanism and Kinetics of Molybdenum Films Etching in Peroxide‐Ammonia Solution

Zambova, A.; Zambov, L.; Stantchev, K.

doi:10.1149/1.2221250

Cited by 11 publications

(8 citation statements)

References 9 publications

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“…Formation of (NH 4 ) 2 MoO 4 was also observed by A. Zambova et al when they etched the Mo film in peroxide-ammonia solution. 24 This explains both RR and SER increase after adding AS in the alkaline H 2 O 2 slurry. In our experiment, when we used same molar concentration of Ammonium and AS, the AS addition resulted in higher removal rate.…”

Section: Resultsmentioning

confidence: 91%

“…It is known that H 2 MoO 4 is slightly soluble in water with water solubility of is 70 g/L at 20 • C. 23 With this low solubility, the formed H 2 MoO 4 would passivate the Mo surface rapidly and act as passivation layer. 24 The effect of AS on the SER and RR of Mo.-It has been reported that ammonia would increase the corrosion of Mo. 24 We tried a lot of agents with NH 4 + , such as ammonia solution, EN, iminodiacetic Acid (IDA).…”

Section: Resultsmentioning

confidence: 99%

“…24 The effect of AS on the SER and RR of Mo.-It has been reported that ammonia would increase the corrosion of Mo. 24 We tried a lot of agents with NH 4 + , such as ammonia solution, EN, iminodiacetic Acid (IDA). According to our experimental results, with same molar content of ammonia solution and AS (0.05 M), under the pH value 9 and same H 2 O 2 concentration, the SER of Mo using AS is 50% greater than that using ammonia.…”

Section: Resultsmentioning

confidence: 99%

“…The ammonium ions can chelate MoO 4 2− by forming a more soluble ammonium molybdate complexes, which can be written as (NH 4 ) 2 MoO 4 , with a solubility of about 430 g/L. 23,24 (NH 4 ) 2 MoO 4 is a weak electrolyte and can exist in the solution as molecule with a large solubility. Formation of (NH 4 ) 2 MoO 4 promotes the dissolution of surface passivation layer.…”

Section: Resultsmentioning

confidence: 99%

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Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Yang

et al. 2017

ECS J. Solid State Sci. Technol.

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Chemical mechanical polishing (CMP) of molybdenum (Mo) using H2O2 based slurry with colloidal silica as abrasives has been systematically investigated. Effects of pH values, abrasives and additive of the slurry on CMP of Mo were investigated respectively. Results show that by adding ammonium sulfate (AS) in the alkaline H2O2 based slurry, both static etch rate (SER) and removal rate (RR) of Mo became much greater than without adding AS because of formation of a highly soluble (NH4)2MoO4. It is found that colloidal silica abrasive particles could adsorb on the Mo surface and have inhibitory effect on corrosion and polishing of Mo, and the higher concentration of colloidal silica particles, the lower SER and RR. AS addition in the slurry would enhance this phenomenon. Raman measurement results show that, silicomolybdic acid could form on the Mo surface in the slurry because of reaction between Moly oxide and silica particles, which causes the adsorption and inhibition of Mo etching and polishing.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Yang

et al. 2017

ECS J. Solid State Sci. Technol.

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“…20 Prior to each experiment the Mo substrate was stripped in a 35% ammonia solution for 5 mn, rinsed under flowing high purity water, and dried under an argon flow. 21 An Autolab potentiostat-galvanostat or a Biologic VMP3 was used for the electrochemical investigation. The current transients during the electrocrystallization were recorded.…”

Section: Methodsmentioning

confidence: 99%

First Stages of CuInSe[sub 2] Electrodeposition from Cu(II)-In(III)-Se(IV) Acidic Solutions on Polycrystalline Mo Films

Roussel

Ramdani²,

Chassaing

et al. 2008

J. Electrochem. Soc.

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The first stages of the electrochemical deposition of a Cu–In–Se compound on molybdenum-coated glass were investigated. The surface morphology was examined after various deposition times by a field emission gun-scanning electron microscope. The surface composition and chemical environment analysis were characterized by X-ray photoelectron spectroscopy (XPS). Raman spectroscopy, X-ray diffraction, and X-ray fluorescence were also performed. This enabled the growth steps to be evidenced. A quasi-instantaneous three-dimensional nucleation occurs. The first nuclei are made of a copper-rich Cu–Se phase without indium. Codeposition of indium starts when the Se/Cu surface ratio reaches a value close to 1, which confirms that the formation of a Cu–Se phase is a prerequisite for indium incorporation. With increasing the deposition time, the In/Cu surface ratio increases and tends to a constant value close to 0.5, smaller than the bulk value. The Se/Cu ratio increases first rapidly and then more slowly, when coalescence of the nuclei has occurred. XPS analysis shows that this two-step behavior corresponds to an evolution of the chemical environment of the Se species, indicating the presence of several Se compounds in the film. X-ray diffraction and Raman spectroscopy confirm the presence of a Cu–Se phase and elemental Se, in addition to the predominant chalcopyrite phase.

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Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

Deng,

Erofeev,

Chowdhuri

et al. 2024

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Molybdenum (Mo) has emerged as a promising material for advanced semiconductor devices, especially in the design and fabrication of interconnects requiring sub‐10 nm metal nanostructures. However, current wet etching methods for Mo using aqueous solutions struggle to achieve smooth etching profiles at such scales. To address this problem, we explore wet chemical etching of patterned Mo nanowires (NWs) using an organic solution: ceric ammonium nitrate (CAN) dissolved in acetonitrile (ACN). In this study, we demonstrate two distinct etching pathways by controlling the reaction temperature: i) digital cyclic scheme at room temperature, with a self‐limiting Mo recess per cycle of ≈1.6 nm, and ii) direct etching at elevated temperature (60 °C), with a time‐controlled Mo recess of ≈2 nm min−1. These methods not only offer a highly controllable nanoscale Mo etching but also ensure smooth and uniform etching profiles independent of the crystal grain orientation of the metal.

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Mechanism and Kinetics of Molybdenum Films Etching in Peroxide‐Ammonia Solution

Cited by 11 publications

References 9 publications

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

First Stages of CuInSe[sub 2] Electrodeposition from Cu(II)-In(III)-Se(IV) Acidic Solutions on Polycrystalline Mo Films

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

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Mechanism and Kinetics of Molybdenum Films Etching in Peroxide‐Ammonia Solution

Cited by 11 publications

References 9 publications

Chemical Mechanical Polishing of Mo Using H2O2as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H2O2as Oxidizer in Colloidal Silica Based Slurries

First Stages of CuInSe[sub 2] Electrodeposition from Cu(II)-In(III)-Se(IV) Acidic Solutions on Polycrystalline Mo Films

Nanoscale Wet Etching of Molybdenum Interconnects with Organic Solutions

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Resources

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Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries

Chemical Mechanical Polishing of Mo Using H₂O₂as Oxidizer in Colloidal Silica Based Slurries