Mechanism for formation of ultra thin SiNx on a-Si - XPS and FTIR studies

Recovery of crystalline silicon from waste solar cells by a green deep eutectic solvent–hydrogen peroxide system

“…59 The disappearance of the peak at 397.8 eV belongs to Si 3 N 4 in the N 1s orbital, implying the removal of Si 3 N 4 . 60 Briefly, after the removal of Si 3 N 4 from the surface of the cells by NaOH, the average surface purity of the obtained silicon wafers was 97.47 wt% with decreased N content of over 96% (from 11.37 to 0.37 wt%) (Fig. 7d).…”