2021
DOI: 10.21203/rs.3.rs-757616/v1
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Mechanism for reconfigurable logic in disordered dopant networks

Abstract: We present an atomic-scale mechanism based on variable-range hopping of interacting charges enabling reconfigurable logic and nonlinear classification tasks in dopant network processing units in silicon. Kinetic Monte Carlo simulations of the hopping process show temperature-dependent current-voltage characteristics, artificial evolution of basic Boolean logic gates, and fitness-dependent gate abundances in striking agreement with experiment. The simulations provide unique insights in the local electrostatic p… Show more

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Cited by 1 publication
(2 citation statements)
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“…On the one hand, they have a smaller footprint and are silicon-based, which may facilitate scaling and integration with conventional electronics. On the other hand, DNPUs do not exhibit time dynamics at the timescales of our measurements, which holds if the measurements are performed below 1 MHz (Tertilt et al, 2022). This makes these systems, in their present form, unsuitable to process data directly in the time domain, but more suitable for the ELM approach.…”
Section: Introductionmentioning
confidence: 89%
See 1 more Smart Citation
“…On the one hand, they have a smaller footprint and are silicon-based, which may facilitate scaling and integration with conventional electronics. On the other hand, DNPUs do not exhibit time dynamics at the timescales of our measurements, which holds if the measurements are performed below 1 MHz (Tertilt et al, 2022). This makes these systems, in their present form, unsuitable to process data directly in the time domain, but more suitable for the ELM approach.…”
Section: Introductionmentioning
confidence: 89%
“…It consists of a network of donor or acceptor dopant atoms in a semiconductor host material. Transport is dominated by hopping and Coulomb interactions, giving rise to strongly non-linear IV characteristics, including negative differential resistance (NDR) (Tertilt et al, 2022). Charge carriers hop from one dopant atom to another under the influence of input and control voltages applied at surrounding electrodes.…”
Section: Introductionmentioning
confidence: 99%