Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Bertness, Kristine A.; Roshko, Alexana; Mansfield, Lorelle M.; Harvey, Todd E.; Sanford, Norman A.

doi:10.1016/j.jcrysgro.2008.03.033

Cited by 153 publications

(116 citation statements)

References 30 publications

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“…38 Calarco et al investigated the nucleation and growth of GaN nanorods on Si (111) by MBE. 29 The nucleation density of GaN nanorods was found to be rapidly increased within 30 min. After 60 min of deposition the density reaches saturation and therefore it is assumed that the nucleation stage is completed.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 95%

“…9,10,[27][28][29][30] First of all, it was found by many groups that the V/III ratio is a crucial factor for MBE growth of selfassembled GaN nanorods. 9,27,28,31 High V/III ratios are normally used to have separate, high aspect ratio GaN nanorod growth.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…Statistics on diameter, length, and volume of the GaN nanorod with growth time was performed, which was well explained by a mathematical equation based on a model describing Si nanowire MBE growth. 29 Foxon et al proposed a complementary geometrical growth model in which the rotation of the substrate is included. 39 This geometrical add-on to the existing GaN nanorod growth models predicts an enhanced growth rate in the vertical direction compared to the lateral growth rate of the rods.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

“…63,64 However, from the result of several investigations, 27,29,30 no Ga metal droplets are found to support the VLS growth mechanism of self-organized GaN nanorod growth. In addition, the self-assembled MBE growth of GaN nanorods are normally performed at the N-rich condition, in which Ga droplets formation should normally be suppressed.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

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GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 95%

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

See 2 more Smart Citations

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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show abstract

“…10-12͒ and NW ensembles 13,14 has been proven. However, the processes of nucleation [15][16][17][18][19] and diffusion of adatoms [20][21][22][23] on the NW still represent interesting and lively discussion subjects as not all the aspects have been clarified. In addition, the understanding of the growth leads to further improvements of sample quality and of the control over the structures, which in turn is beneficial for device performances.…”

mentioning

confidence: 99%

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Gotschke

Schumann

Limbach

et al. 2011

Applied Physics Letters

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Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (dh) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with dh and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

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Self‐Induced Growth of GaN Nanowires by Plasma‐Assisted Molecular Beam Epitaxy

Consonni¹

2014

Wide Band Gap Semiconductor Nanowires 1

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Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy

Cited by 153 publications

References 30 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

Self‐Induced Growth of GaN Nanowires by Plasma‐Assisted Molecular Beam Epitaxy

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