Mechanism of carrier transport in aluminum-doped zinc oxide

Tahar, Radhouane Bel Hadj; Tahar, Noureddine Bel Hadj

doi:10.1063/1.1509083

Cited by 59 publications

(22 citation statements)

References 19 publications

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“…26,27 The experimental values were found to be about one order of magnitude less than the theoretical ones which was attributed to additional scattering at neutral centers. We suppose that the reason is again a pronounced microstructure obtained by segregation at the firing temperature ͑up to 650°C).…”

Section: Electrical Conductivitymentioning

confidence: 94%

Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Mergel

Qiao

2004

Journal of Applied Physics

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Structural and optical properties of thin lead oxide films produced by reactive direct current magnetron sputtering Polycrystalline In 2 O 3 :Sn ͑ITO͒ films were prepared by direct current magnetron sputtering at substrate temperatures between 150 and 400°C and at various oxygen admixtures to the sputter gas. X-ray diffraction peaks ͑position and width͒ were evaluated with respect to lattice distortion ͑net increase and fluctuations of the lattice constant͒. The characteristic optical parameters of the films were obtained by dielectric modeling of experimental transmittance and reflectance spectra. The plasma edge was evaluated with respect to electron density and mobility. The electron density decreases linearly with the lattice distortion. This confirms a model of oxygen incorporation into the lattice during sputtering and allows an estimation of the density of oxygen interstitials from x-ray spectra. The electron mobility inside the grains decreases with decreasing electron density. This is well explained by a model based on scattering at ionized Sn donors that are partially compensated by interstitial oxygen ions. The direct current conductivity is smaller than the conductivity derived from the optically determined parameters because it is hampered by badly conducting grain boundaries. The refractive index decreases linearly with the free electron density which is explained, via the Kramers-Kronig relation, by increasing absorption in the plasma edge and the Burstein-Moss shift of the band edge.

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Section: Electrical Conductivitymentioning

confidence: 94%

Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Mergel

Qiao

2004

Journal of Applied Physics

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“…where s À1 ig is the sum of the individual frequencies due to each scattering mechanisms in the grain bulk, including ionized impurity scattering, neutral impurity scattering, and lattice vibration scattering, [41][42][43][44] and s À1 GB is the scattering frequency at the GBs. In the AZO films with high N in this work, i.e., high degeneracy, only a narrow range of energy around the Fermi level is of interest.…”

Section: F Contribution Of Gb Scattering To Carrier Transportmentioning

confidence: 99%

Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

Nomoto

Makino

Yamamoto

2015

Journal of Applied Physics

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Articles you may be interested inEllipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture J. Appl. Phys. 115, 133505 (2014); 10.1063/1.4870443 Radio-frequency superimposed direct current magnetron sputtered Ga:ZnO transparent conducting thin films J. Appl. Phys. 111, 093718 (2012); 10.1063/1.4709753 Effect of fluorine addition on transparent and conducting Al doped ZnO films

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“…Nevertheless, the mobility deduced for this sample is ∼1.04 cm 2 /V-s, i.e., of the same order as reported earlier (0.1-12.7 cm 2 /Vs) for 0.2-3 at% Al-ZnO thin films. 35 Obviously, about 2.4% of aluminum atoms seem to contribute to electron density while the rest create Zn 2+ vacancies, fill traps, form colour centres at anion vacancies, and/ or segregate as Al 2 O 3 along the grain boundaries. 16 The conductivity of ZnO thin films can be understood on the basis of Zn/O atomic ratio equal to, less or more than unity.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

Srivastava

Kumar

2011

AIP Advances

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Aluminum-doped ZnO thin films of high optical transmittance (∼ 84-100%) and low resistivity (∼ 2.3x10-2 Ωcm) have been prepared on glass substrate by the spin coating and subsequent annealing at 500°C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i) electron concentration following aluminum doping (being trivalent), formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii) carrier mobility

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Mechanism of carrier transport in aluminum-doped zinc oxide

Cited by 59 publications

References 19 publications

Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Correlation of lattice distortion with optical and electrical properties of In2O3:Sn films

Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

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