Mechanism of diffusional transport during ion nitriding of aluminum

Telbizova, T; Parascandola, S.; Kreißig, U.; Günzel, R.; Möller, W.

doi:10.1063/1.126070

Cited by 30 publications

(14 citation statements)

References 8 publications

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“…10 For the PIII treatments, the same profiles were found for nitrogen and oxygen at every temperature and treatment time ͓cf. 10 For the PIII treatments, the same profiles were found for nitrogen and oxygen at every temperature and treatment time ͓cf.…”

Section: B Diffusion Mechanismsmentioning

confidence: 54%

“…5 Similar results were reported for LEI, with a transition between diffusion controlled growth towards rate limit controlled growth at higher temperatures. 10 In contrast, after II or PIII with an energy between 50 and 200 keV, only thin layers below 1 m are reported. 10 In contrast, after II or PIII with an energy between 50 and 200 keV, only thin layers below 1 m are reported.…”

Section: Introductionmentioning

confidence: 98%

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Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities

Manova

Huber

Sienz

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The diffusion of nitrogen in aluminum is investigated for three different methods of nitrogen implantation. Low energy nitrogen implantation ͑LEI͒ at 1 keV and plasma immersion ion implantation ͑PIII͒ with Ϫ30 kV pulses were performed in the temperature range from 250 to 500°C, together with conventional ion implantation at room temperature with 100 keV N ϩ ions and subsequent annealing in vacuum at 440 or 485°C. For the LEI samples a rather high diffusion leading to AlN layers of a few microns in less than 1 h was found, whereas a low diffusion coefficient was obtained for the PIII samples, exhibiting a sharp step near 350°C. In contrast no diffusion was measured in the implanted and annealed samples. Several different factors are proposed to influence the observed diffusion: A competing path between the formation of AlN by trapping of N and N diffusion is responsible for the dependence of the layer thickness on the supply of nitrogen. The oxygen contamination drastically reduces the diffusion constant by occupying the surface sites and blocking the diffusion path. Finally, the phase transformation from c-AlN to h-AlN may cause the sudden onset of diffusion around 350°C.

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Section: B Diffusion Mechanismsmentioning

confidence: 54%

Section: Introductionmentioning

confidence: 98%

Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities

Manova

Huber

Sienz

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…25 Based on this result a simplified picture of the ion nitriding phenomenon can be drawn. shows an schematic of the sample with three different zones as follows: ͑1͒ a reaction zone near the surface, where the N is implanted and AlN formation takes place, ͑2͒ a zone of the nitride layer the thickness of which is zero in the beginning and increases during the process, and ͑3͒ the underlying bulk, which is a source of Al atoms.…”

Section: Resultsmentioning

confidence: 99%

“…25 Thus, the nitride layer growth is governed by the implantation of N and diffusion of Al. The aim of the present study is to describe the nitride layer growth kinetics by considering the flux of N delivery due to implantation and the flux of Al diffusion through the growing AlN medium.…”

Section: Introductionmentioning

confidence: 99%

AlN growth kinetics during ion nitriding of aluminum

Fitz

Möller

2002

Journal of Applied Physics

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“…Ion bombardment of noble gases also causes grain refinement and defects, as well as, increases the diffusion of active nitrogen species 32 . The diffusional transport during ion nitriding of Al is also accompanied by the diffusion of Al from the bulk to the surface that helps in AlN layer growth 33 . The rate of reaction in ion-nitriding can be enhanced by ion-or electron-impact-induced dissociation of physisorbed molecules 34 having a similar effect as the activation in the gas phase.…”

Section: Xrd Analysismentioning

confidence: 99%

Structural and Mechanical Properties of Radiofrequency Ar-N2 Plasma Nitrided Aluminium

Hassan

Qayyum²,

Ahmad³

et al. 2015

Mat. Res.

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Aluminium (Al) samples were nitrided in 13.56 MHz radiofrequency (RF) discharge of 70:30 vol.% Ar:N 2 mixture at substrate temperature of 400 °C and RF power of 300 W for different fill pressures and treatment times. The nitrided samples were then characterized for their structural and mechanical properties using x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS), and Vickers micro hardness testing. XRD peaks (110), (111) and (200) of aluminium nitride (AlN) and their downshift confirmed the nitride formation together with nitrogen diffusion. The metastable cubic phase (c-AlN) shows texture growth and re-orientation dependent on fill pressure and treatment time. SEM micrographs showed the surface morphology with micro-pores. EDS results showed that the nitrogen content was significantly increased with nitriding time, along with the removal of oxides. Vickers hardness of the Al surface was increased more than thrice for 30 hours nitriding.

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Mechanism of diffusional transport during ion nitriding of aluminum

Cited by 30 publications

References 8 publications

Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities

Dependence of ion beam induced nitrogen diffusion in aluminum on oxygen impurities

AlN growth kinetics during ion nitriding of aluminum

Structural and Mechanical Properties of Radiofrequency Ar-N2 Plasma Nitrided Aluminium

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