Vacuum arc or cathodic arc metal plasma sources are attractive and convenient for depositing high-quality thin metal films and metallurgical coatings. It is a common practice to use a curved magnetic filter duct to eliminate macroparticle contamination and to bias the duct wall with a positive voltage to enhance the throughput of the metal plasma. The metal plasma usually consists of several charge states and time-of-flight (TOF) experiments show that the mean charge state of the metal ions decreases with increasing bias and magnetic field applied to the filter duct. We also derive the throughput of ions with different charge states at different bias voltage and magnetic field by the particle-in-cell (PIC) method. The ion trajectory is simulated neglecting the influence of electron charge. Our results show that the simulated mean charge state displays a similar decreasing trend as the bias voltage and magnetic field strength are increased. Phenomena such as reduction of the mean charge state at high magnetic field strength and bias can be explained in terms of standalone multiply charged metal ions under the influences of magnetic and electric forces inside the filter duct. Index Terms-Ion charge states, plasma duct, vacuum arc sources. I. INTRODUCTION V ACUUM arc or cathodic arc metal plasma sources are widely used in plasma-based applications especially for the fabrication of thin films and coatings [1]-[4]. The process can be carried out either at high vacuum or in a low-pressure gaseous environment, and films can be composed of metals, ceramics, diamond-like carbon, some semiconductors and superconductors, and other materials. The method is thus a versatile and powerful plasma tool for the synthesis of novel and technologically interesting surfaces. The contamination of the thin metal films by macroparticles, droplets of resolidified cathode debris of dimensions in the broad range from 0.1 to 10 m, is the major disadvantage precluding a wide application of vacuum arc plasma sources in industry. Macroparticle contamination in general leads to imperfect films, and it is often important Manuscript