Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

Ohiwa, Tokuhisa; Kojima, Akira; Sekine, Makoto; Sakai, Itsuko; Yonemoto, Shigeru; Watanabe, Yumi

doi:10.1143/jjap.37.5060

Cited by 26 publications

(17 citation statements)

References 11 publications

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“…At 2 mtorr, some H 2 will materials. [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] Many of these models failed to explain the etch lag results measured in HgCdTe. However, one particular model, that of Jansen et al 16 …”

Section: Methodsmentioning

confidence: 99%

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Stoltz

Benson

Boyd

et al. 2003

Journal of Elec Materi

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Values of the aspect ratio for trenches etched into HgCdTe by an electron cyclotron resonance (ECR) plasma containing hydrogen and argon are limited by the phenomenon of etch lag. Modeling this plasma as an ion assisted, reactiveetching process leads to a set of conditions that greatly reduces etch lag. Use of these new process conditions produces trenches with aspect ratios greater than 3, widths less than 3 m, and depths in excess of 15 m.

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Section: Methodsmentioning

confidence: 99%

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Stoltz

Benson

Boyd

et al. 2003

Journal of Elec Materi

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show abstract

“…4 The high-density plasma source is a useful tool for anisotropic etching. However, it has very low PR selectivity because of high dissociation of by-product.…”

Section: Introductionmentioning

confidence: 99%

Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma

Chu

Ahn

Kim

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInfinitely high etch selectivity during CH 2 F 2 / H 2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a -C A new periodic two-step process composing SiO 2 etching with high bias radio frequency ͑rf͒ power and fluorocarbon deposition with low bias rf power was studied for the highly selective etching of SiO 2 to photoresist ͑PR͒. In this experiment, the time scale of each step is longer than the conventional time-modulation technique in order to maximize the protection layer on PR and prevent the etch stop. Many works have focused on the gaseous chemical species especially CF 2 radicals for selective surface reaction. However, normally utilizing only the difference of stoichiometric surface reaction, they inherently limit the etching conditions such as dependence on the chemical composition of PR, densities, and impurities of SiO 2 layers. And these conventional processes severely suffer reactive ion etching lag or etch stop in high selective etching. The new process utilizes fluorocarbon deposition with low bias rf power to increase the mask selectivity by enhancing the difference between the polymer thickness on the mask and that on the bottom surface of hole. After the etching step, the polymer film remains only on the mask, and then the higher selectivity of SiO 2 to PR can be achieved. In this article it has been investigated whether the polymer deposition in the suggested process is governed by aspect ratio of holes, surface temperature, bias rf, and microwave powers. The ratio of the amount of etching to deposition is a very important factor in determining the selectivity. With the process a small and deep contact etching with thin PR is possible without shortage of mask thickness with the mask selectivity improved from 6 to 20. We can also find that the etch rate of this new process does not depend significantly on the aspect ratio.

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“…The fact that film deposition occurs near the trench top may suggest that the film is charged. The local charging effect is caused by the temperature difference between ions and electrons, and this effect is characteristic of plasma dielectric etching processes [49]. Due to the fact that the charge of the incident electrons and ions is not completely compensated for on the dielectric sidewalls, bombardment of the trench bottom is hindered, and this induces termination of etching (stop effect).…”

Section: Formation Of Ultrahigh Aspect Ratio Silicon Microstructuresmentioning

confidence: 99%

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

Amirov¹

2015

Russ J Gen Chem

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High-aspect-ratio (HAR) silicon etching of micro-and nanostructures in a time-multiplexed deep etching process (Bosch process) is reviewed, including applications, different technological methods, critical challenges, and main principles of the technologies. HAR silicon etching is an application associated primarily with micro-and nanostructures. This potentially large-scale application requires HAR etching with a high throughput and controllable profile and surface properties. The most significant effects like RIE lag, bowing, stop effect, and profile shape dependence are discussed.

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Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching

Cited by 26 publications

References 11 publications

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma

Plasma chemical etching of high-aspect-ratio silicon micro- and nanostructures

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