Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

Ji, Peiyu; Yu, Jun; Huang, Teng; Chen, Jin; Yang, Yan; Zhuge, Lanjian; Wu, Xuemei

doi:10.1088/2058-6272/aa94bd

Cited by 6 publications

(2 citation statements)

References 40 publications

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“…A self-designed schematic of HWP-CVD apparatus is shown in figure 1, as detailed in [16]. The thin films were deposited on silicon (100) wafers at room temperature.…”

Section: Methodsmentioning

confidence: 99%

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The properties of N-doped diamond-like carbon films prepared by helicon wave plasma chemical vapor deposition

Chen

et al. 2018

Plasma Sci. Technol.

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In this paper, N-doped diamond-like carbon (DLC) films were deposited on silicon substrates by using helicon wave plasma chemical vapor deposition (HWP-CVD) with the Ar/CH 4 /N 2 mixed gas. The surface morphology, structural and mechanical properties of the N-doped DLC films were investigated in detail by scanning electron microscopy (SEM), x-ray photoelectron spectroscopy (XPS), Raman spectra, and atomic force microscopy (AFM). It can be observed from SEM images that surface morphology of the films become compact and uniform due to the incorporation of N. The maximum of the deposition rate of the films is 143 nm min −1 , which is related to the high plasma density. The results of XPS show that the N incorporates in the films and the C−C sp 3 bond content increases firstly up to the maximum (20%) at 10 sccm of N 2 flow rate, and then decreases with further increase in the N 2 flow rate. The maximum Young's modulus of the films is obtained by the doping of N and reaches 80 GPa at 10 sccm of N 2 flow rate, which is measured by AFM in the scanning probe microscope mode. Meanwhile, friction characteristic of the N-doped DLC films reaches a minimum value of 0.010.

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“…A self-designed schematic of HWP-CVD apparatus is shown in figure 1, as detailed in [16]. The thin films were deposited on silicon (100) wafers at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…The HWP has attracted great interests due to its high density plasmas (>10 19 m −3 ) for materials processing [13][14][15]. The relative research reveals [16] that a high films growth rate can be achieved by HWP-CVD with higher plasma density.…”

Section: Introductionmentioning

confidence: 99%