Mechanism of Nonlinear Switching in HfO<sub>2</sub>-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Chand, Umesh; Huang, Kuo‐Cheng; Huang, Clement; Tseng, Tseung‐Yuen

doi:10.1109/ted.2015.2471835

Cited by 71 publications

(36 citation statements)

References 26 publications

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“…Resistive random access memory (RRAM) has attracted a great attention as a potential candidate for next-generation emerging memory devices due to its high switching speed, excellent scalability, low-voltage operation and multilevel storage. [1][2][3][4] There have been numerous studies on binary metal oxides such as FeO x , ZrO x , TiO 2 , NiO, Al 2 O 3 , Cu x O, and HfO x . [5][6][7][8][9][10][11] These metal-insulator-metal structures exhibit resistance switching characteristics due to the inevitable existence of nonstoichiometry in the insulating thin lm.…”

Section: Introductionmentioning

confidence: 99%

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Chen

Chang

et al. 2017

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Chen

Chang

et al. 2017

RSC Adv.

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“…With this feature, the device has the advantages of avoiding the characteristics mismatch between the selector and RRAM. There have been successful attempts to exploit interface and band engineering to realize the nonlinear self‐selection effect in both HfO x ‐ and TaO x ‐based RRAM . The intrinsic nonlinear characteristics can further boost 3D vertical RRAM (V‐RRAM) array integration.…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

“…There have been successful attempts to exploit interface and band engineering to realize the nonlinear self-selection effect in both HfO x -and TaO xbased RRAM. [131][132][133] The intrinsic nonlinear characteristics can further boost 3D vertical RRAM (V-RRAM) array integration.…”

Section: Selection Devicementioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

213

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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“…The physical limitation of the conventional flash memory gives rise to the development of resistive random access memory (RRAM) due to its low power consumption, higher density, and simple structure, which consist of mainly transition metal oxides sandwiched between the top and bottom electrodes [ 1 , 2 , 3 , 4 , 5 , 6 ]. Although, single layer RRAM devices have been found to have uncontrolled filament formation and high switching voltage [ 7 , 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

2020

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Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.

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Mechanism of Nonlinear Switching in HfO₂-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Cited by 71 publications

References 26 publications

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Memory materials and devices: From concept to application

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

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Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Cited by 71 publications

References 26 publications

Dynamic conductance characteristics in HfOx-based resistive random access memory

Dynamic conductance characteristics in HfOx-based resistive random access memory

Memory materials and devices: From concept to application

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

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Mechanism of Nonlinear Switching in HfO₂-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer

Dynamic conductance characteristics in HfO_x-based resistive random access memory

Dynamic conductance characteristics in HfO_x-based resistive random access memory