Mechanism of radiation‐induced defects in SiO<sub>2</sub>: The role of hydrogen

Salh, Roushdey; Fitting, H.‐J.

doi:10.1002/pssc.200673717

Cited by 12 publications

(4 citation statements)

References 15 publications

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“…After bombardment, photoluminescence occurs in the yellow-orange region of the spectrum. Salh and Fitting [15] consider unbridged oxygen to be responsible for luminescence in the region of ∼650 nm. However, we believe that in this region, the contribution of Si precipitates of various sizes and shapes is more important [16,17].…”

Section: Discussion Of the Resultsmentioning

confidence: 99%

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Cherkova

Kachurin

Володин

et al. 2014

Optoelectron.Instrument.Proc.

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This paper presents a study of the effect of swift heavy Xe ions of energy 130-167 MeV at doses of 10 12 -10 14 cm −2 and Bi ions of 700 MeV at doses of 3·10 12 -3·10 13 cm −2 on films of stoichiometric thermal silicon dioxide, silicon dioxide films with ion-implanted excess silicon, and SiOx films with the stoichiometric parameter x varying from 0 to 2. According to electron microscopy and Raman spectroscopy data, irradiation with the swift heavy ions resulted in the formation of silicon nanoclusters. The luminescence spectra depended on the size, number, and structure of the Si nanoclusters formed. Their size can be controlled by varying both the effect parameters (primarily, the ion energy loss per unit length of the track) and the stoichiometric composition of the films.

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Section: Discussion Of the Resultsmentioning

confidence: 99%

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Cherkova

Kachurin

Володин

et al. 2014

Optoelectron.Instrument.Proc.

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“…Bands with maximum at 1.9 eV corresponded to intrinsic silica defect such as non-bridging oxygen hole centers. One of the valence bonds of oxygen of such a defect has an unpaired electron: ≡Si-O•, where "≡" denotes three bonds, "•" -an unpaired electron [15]. The band with a maximum at 2.6 eV was associated with another intrinsic silica defect -oxygen deficient centers: ≡Si-Si≡ [15].…”

Section: Mathematical Treatment and Discussionmentioning

confidence: 99%

Influence of the Order of Ion Implantation on Luminescent Spectrum of ZnSe Nanocrystals

Boichenko

Kononenko

Комаров

et al. 2021

EEJP

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The paper presents the results of mathematical treatment of the luminescent spectra of ZnSe nanocrystals. The samples were formed by the implantation of 150 keV Zn+ and 170 keV Se+ ions in silicon dioxide layer obtained by oxidation of a silicon substrate. We analyzed two sorts of the samples obtained with different implantation sequences: Zn+ were implanted first, and Se+ implanted next (sample A); reverse sequence with Se+ implanted at the beginning (sample B). The spectra obtained for different implantation sequences A and B differed from each other. It was found that besides the intensive evident bands with maxima at 2.3 eV (540 nm) and 2.85 eV (430 nm), which were associated with ZnSe intrinsic luminescent centers, there were two bands with maxima at 1.9 eV (650 nm) and 2.6 eV (480 nm), which were related to intrinsic SiO2 defects. Hereby the effect of the medium (silicon dioxide matrix) on luminescent spectra of SiO2 films with ZnSe nanocrystals formed by ion implantation was demonstrated. Mathematical treatment of the band shape with a maximum of 2.85 eV showed that the parameters such as full width at half maximum, skewness and kurtosis indicated the dependence of size distribution of ZnSe nanoparticles on the implantation sequence of ions. The results are in a good agreement with the data of Transmission Electron Microscopy.

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“…This results in a shift of defect balance because of hydrogen passivation process. The implanted hydrogen can saturate oxygen dangling bond defects [4]. A prolonged irradiation leads to substantial changes of light generation and absorption in the visible wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Change of silica luminescence due to fast hydrogen ion bombardment

2015

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Abstract. This paper deals with the luminescence of silica (KV-type) induced by beam of hydrogen ions with the energy of 210 keV per nucleon. An average implantation dose of up to 3.5 × 10 21 cm -3 (5 × 10 10 Gy) was accumulated during irradiation over an extended period. The luminescent spectra consisted of the blue band (maximum at 456 nm) and the red band (650 nm) in the visible range. It was shown that increase in the absorption dose had an effect on the silica luminescence. It was found that the most signifi cant changes in the spectrum occurred during the dose accumulation in the region of 550-700 nm. The shape of the spectrum of the luminescent radiation in this wavelength range was affected both by the oxygen defi cient centres (blue band) and non-bridging oxygen hole centers (red band). Mathematical processing of the experimental spectra permitted to identify contributions to the luminescent radiation coming from both types of defects.

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Mechanism of radiation‐induced defects in SiO₂: The role of hydrogen

Cited by 12 publications

References 15 publications

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Influence of the Order of Ion Implantation on Luminescent Spectrum of ZnSe Nanocrystals

Change of silica luminescence due to fast hydrogen ion bombardment

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Mechanism of radiation‐induced defects in SiO2: The role of hydrogen

Cited by 12 publications

References 15 publications

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiO x films irradiated with swift heavy ions

Influence of the Order of Ion Implantation on Luminescent Spectrum of ZnSe Nanocrystals

Change of silica luminescence due to fast hydrogen ion bombardment

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Mechanism of radiation‐induced defects in SiO₂: The role of hydrogen