Mechanisms for generation of oxide trapped charges in ultrathin silicon dioxide films during electrical stress

Samanta, Piyas

doi:10.1016/j.sse.2007.08.014

Cited by 5 publications

(1 citation statement)

References 16 publications

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“…Electrical stress has an important role in MOS device mobility degradation (Samanta, 2008). Electrical stress exposure results in a build‐up of oxide charge in the oxide and an increase in interface trap density at the Si‐SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

A new time‐dependent mobility degradation model for MOS transistors

Özçelep

Kuntman

2012

Microelectronics International

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PurposeThe purpose of this paper is to propose a time‐dependent mobility degradation model which is independent from the process or operating conditions.Design/methodology/approachIn total, four transistors under test are electrically stressed using constant positive electrical stress voltage technique with the gate bias of VG=40 V DC, where the source and drain were grounded. The authors increased the stress voltage step by step to avoid electrostatic discharge and recorded the ID‐VDS and ID‐VGS measurements in time intervals during the stress.FindingsThe experimental results show that the output current and the threshold voltage of the transistor are increased after the stress. Mobility and channel length are decreased. The changes in the transistor parameters were associated to interface state Si/SiO2 effects. The authors used the physical changes in transistor and proposed a new‐time dependent mobility degradation model. The mobility change was calculated using the proposed model and compared with the experimental results. It was seen that the calculated and experimental results are in good agreement.Originality/valueThis is an original research paper and enables the mobility degradation to be predicted independently from effects of process or operational changes such as oxide thickness, substrate doping, and applied voltages on transistor.

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Section: Introductionmentioning

confidence: 99%

A new time‐dependent mobility degradation model for MOS transistors

Özçelep

Kuntman

2012

Microelectronics International

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The effect of ultraviolet light on structural properties of exfoliated and CVD graphene

Emelianov

Kireev

Levin

et al. 2016

Applied Physics Letters

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We investigate the effect of UV processing of graphene with different structural properties prepared by mechanical exfoliation and CVD growth. Depending on UV exposure time, we observe different effects like oxidation, doping, and etching. For bi-layered and few-layered graphene flakes, we do not observe significant etching even after 3 h exposure which indicates the high resistance of graphene to reactive oxygen species intercalation between graphene layers. Single-layer CVD-grown graphene is fully etched after 2 h of UV treatment. The crystalline size of exfoliated single layer graphene after UV exposure drops from 45 to 5 nm while for CVD graphene from just 10 to 2 nm. We investigate the effect of UV irradiation on field effect transistors, demonstrating sequential cleaning from polymer residuals, oxidation (doping), and final etching of graphene. After 30 minutes of UV irradiation, we observe the hole mobility of a CVD single layer graphene transistor increasing up to 400 cm2/V·s.

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