Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

Cheng, Yung Chen; Tseng, Cheng Hua; Hsu, Chih-Wei; Jen, Kung; Feng, Shih Wei; Lin, Emily; Yang, Chang-Hao; Chyi, Jen Inn

doi:10.1007/s11664-003-0161-8

Cited by 13 publications

(2 citation statements)

References 21 publications

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“…A diffusive interface is often attributed to the migration of indium and gallium atoms through the spinodal decomposition process resulting in the formation of clusters and localization of charge carriers. [24,25]. The intrinsic phonon properties of high-quality InN are thus of relevance to self-heating and phonon engineering.…”

Section: Introductionmentioning

confidence: 99%

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

et al. 2018

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In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

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Section: Introductionmentioning

confidence: 99%

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

et al. 2018

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“…One of the most important light-emitting active layers, InGaN/GaN single or multiple quantum wells, draw special attention because of its unique material characteristics and device performance. Despite the large density of defects, primarily threading dislocation that exist in the InGaN/GaN multiple quantum well (MQW) region, the radiative recombination efficiency is surprisingly high and LEDs can achieve an external efficiency as high as 20% [3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

Liang

Tang

et al. 2004

Journal of Crystal Growth

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Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

Cheng

Lin

Feng

et al. 2003

phys. stat. sol. (c)

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We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample. 1 Introduction Silicon doping in InGaN/GaN quantum wells (QWs) has been widely used in fabricating high performance light emitting devices. With silicon doping, the effects of growth mode change, microstructure alternation (formation of quantum dots (QDs)-like structures), potential fluctuation reduction, strain relaxation, and piezoelectric field screening have been reported [1][2][3][4][5]. However, most previous studies of silicon doping effects focused on the samples emitting purple-blue photons. Usually, it is difficult to achieve a uniform InGaN alloy, particularly with high indium contents. This is because of the solid phase immiscibility and phase separation, which stem from the large lattice constant mismatch between GaN and InN. Because of the need of blue and green light-emitting applications, it becomes more and more important to study high indium InGaN compounds with silicon doping. In this paper, we report the characteristics of amplified spontaneous emission (ASE), photoluminescence (PL), and photoluminescence excitation (PLE) of high indium (in the green range) InGaN/GaN QWs. Also, the results of relatively low-indium-content QWs were compared to show the effects of indium content variation.

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Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures

Cited by 13 publications

References 21 publications

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy

Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

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