Mechanisms of amorphization in ion implanted crystalline silicon

Campisano, S. U.; Coffa, S.; Raineri, V.; Priolo, F.; Rimini, E.

doi:10.1016/0168-583x(93)96171-8

Cited by 96 publications

(43 citation statements)

References 19 publications

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“…This is in remarkable agreement with the observation by in situ TEM of the role of grey zones in nucleating the transition, 3 as well as the superlinear dependence of damage with deposited energy. 1 Our results are also consistent with the existence of a threshold energy for amorphization, 4,7 necessary to the creation of extended defects, i.e., collision cascades.…”

supporting

confidence: 78%

“…1 In these experiments, it was observed that the rate of production of amorphous material increases in a superlinear way with deposited energy, indicating that amorphization is more effective when the host sample is already damaged. This cannot be explained by heterogeneous nucleation.…”

mentioning

confidence: 87%

“…Two competing views of the phenomenon have been proposed: ͑i͒ heteregeneous nucleation, whereby amorphization proceeds by the coalescence of the quenched-in amorphous ''collision cascades'' left by the implanted ions, and ͑ii͒ homogeneous nucleation, where the amorphous phase grows following the accumulation, above a certain threshold, of damage resulting from the passage of ions; this is similar to the well-characterized growth of a-Si at a/c interfaces. 1 In a recent Letter, 2 Diaz de la Rubia and Gilmer ͑DG͒ have shown, using molecular-dynamics ͑MD͒ simulations, that energetic ͑5 keV͒ Si ions could give rise, via a melt-andquench process, to the formation of localized amorphous regions, or ''spikes.'' The role played by these spikes in the c-to-a transition was not established by DG, but it can be conjectured that overall amorphization will take place when the local displacement cascades begin to overlap, consistent with the heteregeneous-nucleation model.…”

mentioning

confidence: 99%

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Defect-induced nucleation and growth of amorphous silicon

Lewis

Nieminen

1996

Phys. Rev. B

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supporting

confidence: 78%

mentioning

confidence: 87%

mentioning

confidence: 99%

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Defect-induced nucleation and growth of amorphous silicon

Lewis

Nieminen

1996

Phys. Rev. B

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“…[153] This was confirmed by own experiments on silicon samples with different dopant types and dopant levels. The silicon substrates were implanted with 42 keV H-ions to a higher dose of 5 × 10 16 cm -2 to produce more damage in the samples in the as-implanted state.…”

Section: Evolution Of the Hydrogen And Implantation Damage Depth Distsupporting

confidence: 67%

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Höchbauer

2001

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ZusammenfassungDer sogenannte "Ion-Cut", ein Schichtabspaltungsprozess mittels WasserstoffIonenimplantation und darauffolgender Probenerwärmung ist eine effektive, vielseitige und ökonomische Methode, um Siliziumschichten mit einer Dicke von nur einigen Nanometern von einem Siliziumsubstrat auf andere Materialien zu transferieren. Somit ermöglicht der Ion-Cut die Produktion von Siliziumschichen auf isolierenden Materalien ("silicon-on-insulator" (SOI) AbstractThe "Ion-Cut", a layer splitting process by hydrogen ion implantation and subsequent annealing is a versatile and efficient technique of transferring thin silicon surface layers from bulk substrates onto other substrates, thus enabling the production of silicon-oninsulator (SOI) materials. Cleavage is induced by the coalescence of the highly pressurized sub-surface H 2 -gas bubbles, which form upon thermal annealing. A fundamental understanding of the basic mechanisms on how the cutting process occurs is still unclear, inhibiting further optimization of the Ion-Cut process. This work elucidates the physical mechanisms behind the Ion-Cut process in hydrogen-implanted silicon. The investigation of the cleavage process reveals the cut to be largely controlled by the lattice damage, generated by the hydrogen ion irradiation process, and its effects on the local stress field and the fracture toughness within the implantation zone rather than by the depth of maximum H-concentration. Furthermore, this work elucidates the different kinetics in the H-complex formations in silicon crystals with different conductivity types, and examines the mechanically induced damage accumulation caused by the crack propagation through the silicon sample in the splitting step of the Ion-Cut process. Additionally, the influence of boron pre-implantation on the Ion-Cut in hydrogen implanted silicon is investigated. These studies reveal, that both, the atomic interaction between the boron implant and the hydrogen implant and the shift of the Fermi level due to the electrical activation of the implanted boron have a tremendous enhancing effect on the Ion-Cut process.

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“…28 Two competing models are proposed for this purpose: (i) heterogeneous and (ii) homogeneous amorphization models. In the heterogeneous model, amorphization is assumed to occur initially in the cylindrical region around each ion path.…”

Section: B Rapid Thermal Annealingmentioning

confidence: 99%

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

Kurihara

Hikino

Adachi

2004

Journal of Applied Physics

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The optical properties of N + ion-implanted Si͑100͒ wafers have been studied using the spectroscopic ellipsometry (SE). The N + ions are implanted at 150 keV with fluences in the range between 1 ϫ 10 16 and 7.5ϫ 10 16 cm −2 at room temperature. A Bruggeman effective-medium-approximation and a linear-regression analysis require a four-phase model (substrate/first and second damaged layers/ambient) to explain the experimental data of the as-implanted samples. These analyses suggest that the buried fully amorphous layer can be formed at around ϳ5 ϫ 10 16 cm −2 dose. The rapid thermal annealing is performed at 750°C in a dry N 2 atmosphere on N + ion-implanted samples. The SE data reveal that the recrystallization starts to occur very quickly. The time constant for the defect annealing in the deeper damaged layer is determined to be 36 s. The dielectric-function spectra ͑E͒ of microcrystalline silicon deduced here differ appreciably from that of the single-crystalline silicon, especially in the vicinity of the critical points.

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Mechanisms of amorphization in ion implanted crystalline silicon

Cited by 96 publications

References 19 publications

Defect-induced nucleation and growth of amorphous silicon

Defect-induced nucleation and growth of amorphous silicon

On the Mechanisms of Hydrogen Implantation Induced Silicon Surface Layer Cleavage

Optical properties of N+ ion-implanted and rapid thermally annealed Si(100) wafers studied by spectroscopic ellipsometry

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