Mechanisms of arsenic clustering in silicon

Abstract

A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number of the negatively charged clusters incorporating a point defect and one or more arsenic atoms are investigated. It is shown that for the doubly negatively charged clusters or for clusters incorporating more than one arsenic atom the electron density reaches a maximum value and then monotonically and slowly decreases as total arsenic concentration increases. In the case of doubly negatively charged cluster incorporating two arsenic atoms, the calculated electron density agrees well with the experimental data. Agreement with the experiment confirms the conclusion that two arsenic atoms participate in the cluster formation. Among all present models, the proposed model of clustering by formation of doubly negatively charged cluster incorporating two arsenic atoms gives the best fit to the experimental data and can be used in simulation of high concentration arsenic diffusion.Comment: 13 pages, 4 figures. Revised and shortened version of the paper has been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006

Phonons in SiAs: Raman scattering study and DFT calculations

“…Various arsenic‐vacancy clusters as well as SiAs aggregates or precipitates were observed that contribute to the deactivation of arsenic. Even now, they are subjects of numerous experimental studies and first‐principles calculations 14–18. In spite of the large amount of scientific literature, the SiAs system is still not completely understood.…”

Modeling of Ion Implantation and Rapid Thermal Treatments during the Formation of Active Regions of Submicron and Nanometer Silicon IС

“…Как показано в работах [4,16,17], диффузионный поток примеси можно представить в виде (2) Здесь χ -общая концентрация носителей заряда, нормированная к собственной концентрации носи-телей n e : (3) Из закона сохранения частиц и условий (2) и (3) получаем следующее нелинейное уравнение диффузии:…”

“…Приведен-ные методы и результаты иссле-дований основаны на более ранних публикациях [4][5][6][7][8][9][10][11].…”

Set of equations for transient enhanced diffusion in shallow ion-implanted layers

“…[4], to describe the impurity clustering during transient enhanced diffusion of As and P, one can use the expression…”

“…[1,2] provide some evidence of disagreement with the experimental data in the vicinity of the interface. The difference is mainly due to the use of inadequate clustering models for the description of high concentration diffusion [4], due to the influence of interfaces on the defect distributions [5], due to dopant atom trapping by immobile sinks [6], and due to the influence of stresses on the dopant and defect diffusion [7,8]. The principal goal of this investigation is to obtain a set of equations describing impurity diffusion and quasichemical reactions of dopant atoms and point defects near the surface or interface to simulate adequately the transient enhanced diffusion in shallow implanted layers.…”