Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures

Electric-field influence on the polarization of the quantum well photoluminescence is studied in the diode structures InGaAs/GaAs/δ-Mn with narrow GaAs spacer dS = 2–5 nm at small magnetic field. Weakening of the circular polarization degree with increasing electric-field evidence about significant contribution of the stationary mechanism of the carriers’ polarization due to their exchange coupling with a nearby ferromagnetic δ-Mn-layer.

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Mechanisms of Carrier Polarization in Ferromagnetic InGaAs/GaAs/δ-〈Mn〉 Heterostructures

Cited by 3 publications

References 8 publications

Controlling the Polarization of Light in InGaAs/GaAs/δ-Mn Ferromagnetic Diode Structures

Controlling the Polarization of Light in InGaAs/GaAs/δ-Mn Ferromagnetic Diode Structures

Coherent Spin Dynamics in the Nonuniform Ferromagnetic InGaAs/GaAs/δ-Mn Structures

Control of the light polarization in ferromagnetic diode structures InGaAs/GaAs/δ-Mn

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